Vishay Intertechnology, Inc. MOSFET SUD50N04-06H-E3

Description
MOSFET 40V 109A 136W 6.0mohm @ 10V
Description
MOSFET 40V 109A 136W 6.0mohm @ 10V
Datasheet
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SUD50N04-06H-E3 is an N-channel 40-V MOSFET in a TO-252 package with a drain-to-source continuous current rating of 109 A at 25 °C and 77 A at 100 °C, and a maximum power dissipation of 136 W. It has a drain-source on-state resistance of 0.006 Ω at 10 V gate-source voltage and 20 A drain current. The device features a maximum junction temperature of 175 °C, a total gate charge of 95 nC, and is RoHS compliant. Thermal resistance from junction to case is 0.85-1.1 °C/W, and junction-to-ambient is 40-50 °C/W on a 1" FR4 board.

Datasheet Summary
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SUD50N04-06H-E3 is an N-channel 40-V MOSFET in a TO-252 package with a drain-to-source continuous current rating of 109 A at 25 °C and 77 A at 100 °C, and a maximum power dissipation of 136 W. It has a drain-source on-state resistance of 0.006 Ω at 10 V gate-source voltage and 20 A drain current. The device features a maximum junction temperature of 175 °C, a total gate charge of 95 nC, and is RoHS compliant. Thermal resistance from junction to case is 0.85-1.1 °C/W, and junction-to-ambient is 40-50 °C/W on a 1" FR4 board.

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Sheung Wan, Hong Kong
MOSFET 40V 109A 136W 6.0mohm @ 10V

MOSFET 40V 109A 136W 6.0mohm @ 10V

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number SUD50N04-06H-E3
Product Name MOSFET
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