Vishay Precision Group Single FETs, MOSFETs SUD50N03-06AP-E3

Description
N-Channel 30V 90A (Tc) 10W (Ta), 83W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet
Description
N-Channel 30V 90A (Tc) 10W (Ta), 83W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SUD50N03-06AP-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUD50N03-06AP-E3TR-ND
Single FETs, MOSFETs SUD50N03-06AP-E3TR-ND
N-Channel 30V 90A (Tc) 10W (Ta), 83W (Tc) Surface Mount TO-252AA

N-Channel 30V 90A (Tc) 10W (Ta), 83W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - SUD50N03-06AP-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUD50N03-06AP-E3CT-ND
Single FETs, MOSFETs SUD50N03-06AP-E3CT-ND
N-Channel 30V 90A (Tc) 10W (Ta), 83W (Tc) Surface Mount TO-252AA

N-Channel 30V 90A (Tc) 10W (Ta), 83W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Singapore, Singapore
30V 30A 10W TO-252 MOSFET Transistor
2088-SUD50N03-06AP-E3
30V 30A 10W TO-252 MOSFET Transistor 2088-SUD50N03-06AP-E3
30V 30A N-CH MOSFET, 5.7mR Rds On, TO-252, 10W Product overview: SUD50N03-06AP-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 30A, 10W, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 30A, 10W, TO-252, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SUD50N03-06AP-E 3 can be used for catalog matching and distributor lookup.

30V 30A N-CH MOSFET, 5.7mR Rds On, TO-252, 10W Product overview: SUD50N03-06AP-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 30A, 10W, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 30A, 10W, TO-252, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SUD50N03-06AP-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50N03-06AP-E3 - 031612-SUD50N03-06AP-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50N03-06AP-E3
031612-SUD50N03-06AP-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50N03-06AP-E3 031612-SUD50N03-06AP-E3
Manufacturer: Vishay Win Source Part Number: 031612-SUD50N03-06AP -E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 10W (Ta), 83W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 2.4V @ 250μA Max Gate Charge: 95nC @ 10V Max Input Capacitance: 3800pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.7 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 031612-SUD50N03-06AP-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 10W (Ta), 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 90A (Tc)
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Gate Charge: 95nC @ 10V
Max Input Capacitance: 3800pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.7 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUD50N03-06AP-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUD50N03-06AP-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUD50N03-06AP-E3
MOSFET N-CH 30V 90A TO252

MOSFET N-CH 30V 90A TO252

Supplier's Site
MOSFET 30V 90A 83W

MOSFET 30V 90A 83W

Buy Now Datasheet
N Channel Mosfet; Channel Type Vishay - 55M4841 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet; Channel Type Vishay
55M4841
N Channel Mosfet; Channel Type Vishay 55M4841
N CHANNEL MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:90A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.2V; Power Dissipation:10W RoHS Compliant: Yes

N CHANNEL MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:90A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.2V; Power Dissipation:10W RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SUD50N03-06AP-E3TR-ND 2088-SUD50N03-06AP-E3 031612-SUD50N03-06AP-E3 SUD50N03-06AP-E3 SUD50N03-06AP-E3 55M4841
Product Name Single FETs, MOSFETs 30V 30A 10W TO-252 MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50N03-06AP-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N Channel Mosfet; Channel Type Vishay
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); TO-252, (D-Pak) TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3
PD 10000 milliwatts 10000 to 83000 milliwatts 10000 milliwatts
TJ -55 C (-67 F) -55 to 175 C (-67 to 347 F)
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