Manufacturer: Vishay
Win Source Part Number: 031612-SUD50N03-06AP
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 10W (Ta), 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 90A (Tc)
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Gate Charge: 95nC @ 10V
Max Input Capacitance: 3800pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.7 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
30V 30A N-CH MOSFET, 5.7mR Rds On, TO-252, 10W Product overview: SUD50N03-06AP-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 30A, 10W, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 30A, 10W, TO-252, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SUD50N03-06AP-E
N-Channel 30V 90A (Tc) 10W (Ta), 83W (Tc) Surface Mount TO-252AA
N-Channel 30V 90A (Tc) 10W (Ta), 83W (Tc) Surface Mount TO-252AA
MOSFET N-CH 30V 90A TO252
N CHANNEL MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:90A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.2V; Power Dissipation:10W RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 031612-SUD50N03-06AP-E3 | 2088-SUD50N03-06AP-E3 | SUD50N03-06AP-E3TR-ND | SUD50N03-06AP-E3 | SUD50N03-06AP-E3 | 55M4841 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50N03-06AP-E3 | 30V 30A 10W TO-252 MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | |||||
| PD | 10000 to 83000 milliwatts | 10000 milliwatts | 10000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) |