Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50N02-06P-E3 SUD50N02-06P-E3

Description
Manufacturer: Vishay Win Source Part Number: 031611-SUD50N02-06P- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 6.8W (Ta), 65W (Tc) Family Name: SUD50N02-06P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 30nC @ 4.5V Max Input Capacitance: 2550pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): IRFR3711PBF; IRFR3711TRL; IRFR3711TR; Introduction Date: September 24, 2002 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 031611-SUD50N02-06P- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 6.8W (Ta), 65W (Tc) Family Name: SUD50N02-06P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 30nC @ 4.5V Max Input Capacitance: 2550pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): IRFR3711PBF; IRFR3711TRL; IRFR3711TR; Introduction Date: September 24, 2002 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50N02-06P-E3 - 031611-SUD50N02-06P-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50N02-06P-E3
031611-SUD50N02-06P-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50N02-06P-E3 031611-SUD50N02-06P-E3
Manufacturer: Vishay Win Source Part Number: 031611-SUD50N02-06P- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 6.8W (Ta), 65W (Tc) Family Name: SUD50N02-06P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 30nC @ 4.5V Max Input Capacitance: 2550pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): IRFR3711PBF; IRFR3711TRL; IRFR3711TR; Introduction Date: September 24, 2002 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 031611-SUD50N02-06P-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 6.8W (Ta), 65W (Tc)
Family Name: SUD50N02-06P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 30nC @ 4.5V
Max Input Capacitance: 2550pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): IRFR3711PBF; IRFR3711TRL; IRFR3711TR;
Introduction Date: September 24, 2002
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SUD50N02-06P-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUD50N02-06P-E3TR-ND
Single FETs, MOSFETs SUD50N02-06P-E3TR-ND
N-Channel 20V 50A (Tc) 6.8W (Ta), 65W (Tc) Surface Mount TO-252AA

N-Channel 20V 50A (Tc) 6.8W (Ta), 65W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Singapore
20V 50A TO252 MOSFET Transistor
278-SUD50N02-06P-E3
20V 50A TO252 MOSFET Transistor 278-SUD50N02-06P-E3
MOSFET N-CH 20V 50A TO252 Product overview: SUD50N02-06P-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 50A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 50A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUD50N02-06P-E3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 20V 50A TO252 Product overview: SUD50N02-06P-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 50A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 50A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUD50N02-06P-E3 can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUD50N02-06P-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUD50N02-06P-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUD50N02-06P-E3
MOSFET N-CH 20V 50A TO252

MOSFET N-CH 20V 50A TO252

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 031611-SUD50N02-06P-E3 SUD50N02-06P-E3TR-ND 278-SUD50N02-06P-E3 SUD50N02-06P-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50N02-06P-E3 Single FETs, MOSFETs 20V 50A TO252 MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 20 volts
PD 6800 to 65000 milliwatts 6800 milliwatts
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