Manufacturer: Vishay
Win Source Part Number: 120186-SUD50N02-04P-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Family Name: SUD50N02-04P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 60nC @ 4.5V
Max Input Capacitance: 5000pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.3 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): IRLR6225PbF; IRLR6225TRPbF; 2SK3639-ZK-A; IRFR3711ZTRR;
Introduction Date: May 13, 2003
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 20V 50A TO252
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 120186-SUD50N02-04P-E3 | SUD50N02-04P-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50N02-04P-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | |
| V(BR)DSS | 20 volts | |
| PD | 8300 to 136000 milliwatts |
