Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD40N10-25-E3 SUD40N10-25-E3

Description
Manufacturer: Vishay Win Source Part Number: 123301-SUD40N10-25-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta), 136W (Tc) Family Name: SUD40N10-25 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 2400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 25 mOhm @ 40A, 10V Alternative Parts (Cross-Reference): DMNH10H028SK3Q-13 ; FDD3670_NL; FDD3670-Q; DMNH10H028SK3-13; Introduction Date: April 26, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited Application Field: Used in Power Management
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Description
Manufacturer: Vishay Win Source Part Number: 123301-SUD40N10-25-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta), 136W (Tc) Family Name: SUD40N10-25 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 2400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 25 mOhm @ 40A, 10V Alternative Parts (Cross-Reference): DMNH10H028SK3Q-13 ; FDD3670_NL; FDD3670-Q; DMNH10H028SK3-13; Introduction Date: April 26, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited Application Field: Used in Power Management
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD40N10-25-E3 - 123301-SUD40N10-25-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD40N10-25-E3
123301-SUD40N10-25-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD40N10-25-E3 123301-SUD40N10-25-E3
Manufacturer: Vishay Win Source Part Number: 123301-SUD40N10-25-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta), 136W (Tc) Family Name: SUD40N10-25 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 2400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 25 mOhm @ 40A, 10V Alternative Parts (Cross-Reference): DMNH10H028SK3Q-13 ; FDD3670_NL; FDD3670-Q; DMNH10H028SK3-13; Introduction Date: April 26, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited Application Field: Used in Power Management

Manufacturer: Vishay
Win Source Part Number: 123301-SUD40N10-25-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Family Name: SUD40N10-25
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 2400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 25 mOhm @ 40A, 10V
Alternative Parts (Cross-Reference): DMNH10H028SK3Q-13 ; FDD3670_NL; FDD3670-Q; DMNH10H028SK3-13;
Introduction Date: April 26, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management

Buy Now Datasheet
Singapore
N-Channel 40 A 100 V 0.025 ohm MOSFET Transistor
278-SUD40N10-25-E3
N-Channel 40 A 100 V 0.025 ohm MOSFET Transistor 278-SUD40N10-25-E3
TRANSISTOR 40 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, LEAD FREE, TO-252, 3 PIN, FET General Purpose Power Product overview: SUD40N10-25-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40 A, 100 V, 0.025 ohm, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40 A, 100 V, 0.025 ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUD40N10-25-E3 can be used for catalog matching and distributor lookup.

TRANSISTOR 40 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, LEAD FREE, TO-252, 3 PIN, FET General Purpose Power Product overview: SUD40N10-25-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40 A, 100 V, 0.025 ohm, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40 A, 100 V, 0.025 ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUD40N10-25-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SUD40N10-25-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SUD40N10-25-E3
Single FETs, MOSFETs SUD40N10-25-E3
MOSFET N-CH 100V 40A TO252

MOSFET N-CH 100V 40A TO252

Supplier's Site Datasheet
Single FETs, MOSFETs - SUD40N10-25-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUD40N10-25-E3TR-ND
Single FETs, MOSFETs SUD40N10-25-E3TR-ND
N-Channel 100V 40A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

N-Channel 100V 40A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - SUD40N10-25-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUD40N10-25-E3DKR-ND
Single FETs, MOSFETs SUD40N10-25-E3DKR-ND
N-Channel 100V 40A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

N-Channel 100V 40A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - SUD40N10-25-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUD40N10-25-E3CT-ND
Single FETs, MOSFETs SUD40N10-25-E3CT-ND
N-Channel 100V 40A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

N-Channel 100V 40A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUD40N10-25-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUD40N10-25-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUD40N10-25-E3
MOSFET N-CH 100V 40A TO252

MOSFET N-CH 100V 40A TO252

Supplier's Site
Sheung Wan, Hong Kong
MOSFET RECOMMENDED ALT 781-SUD35N10-26P-GE3

MOSFET RECOMMENDED ALT 781-SUD35N10-26P-GE3

Buy Now Datasheet
N Channel Mosfet, 100V, 40A, To-252; Channel Type Vishay - 06J8450 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 100V, 40A, To-252; Channel Type Vishay
06J8450
N Channel Mosfet, 100V, 40A, To-252; Channel Type Vishay 06J8450
N CHANNEL MOSFET, 100V, 40A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

N CHANNEL MOSFET, 100V, 40A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site
Mosfet, N Channel, 100V, 40A, To-252-3, Full Reel; Channel Type Vishay - 29X0560 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 100V, 40A, To-252-3, Full Reel; Channel Type Vishay
29X0560
Mosfet, N Channel, 100V, 40A, To-252-3, Full Reel; Channel Type Vishay 29X0560
MOSFET, N CHANNEL, 100V, 40A, TO-252-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:136W RoHS Compliant: Yes

MOSFET, N CHANNEL, 100V, 40A, TO-252-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:136W RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 123301-SUD40N10-25-E3 278-SUD40N10-25-E3 SUD40N10-25-E3 SUD40N10-25-E3TR-ND SUD40N10-25-E3 SUD40N10-25-E3 06J8450 29X0560
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD40N10-25-E3 N-Channel 40 A 100 V 0.025 ohm MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N Channel Mosfet, 100V, 40A, To-252; Channel Type Vishay Mosfet, N Channel, 100V, 40A, To-252-3, Full Reel; Channel Type Vishay
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 3000 to 136000 milliwatts 136000 milliwatts 3000 milliwatts 136000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 C (-67 F) -55 to 175 C (-67 to 347 F)
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