Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD40N08-16-E3 SUD40N08-16-E3

Description
Manufacturer: Vishay Win Source Part Number: 137807-SUD40N08-16-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta), 136W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 1960pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 16 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD40N08-16-E3 - 137807-SUD40N08-16-E3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SUD40N08-16-E3TR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - SUD40N08-16-E3DKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - SUD40N08-16-E3CT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - SUD40N08-16-E3 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Mosfet Transistor, N Channel, 40 A, 80 V, 0.013 Ohm, 10 V, 2 V Rohs Compliant Vishay - 97W3069 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUD40N08-16-E3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 137807-SUD40N08-16-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta), 136W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 1960pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 16 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD40N08-16-E3 - 137807-SUD40N08-16-E3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD40N08-16-E3
137807-SUD40N08-16-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD40N08-16-E3 137807-SUD40N08-16-E3
Manufacturer: Vishay Win Source Part Number: 137807-SUD40N08-16-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta), 136W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 1960pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 16 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 137807-SUD40N08-16-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 1960pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - SUD40N08-16-E3TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUD40N08-16-E3TR-ND
Single FETs, MOSFETs SUD40N08-16-E3TR-ND
N-Channel 80V 40A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

N-Channel 80V 40A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - SUD40N08-16-E3DKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUD40N08-16-E3DKR-ND
Single FETs, MOSFETs SUD40N08-16-E3DKR-ND
N-Channel 80V 40A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

N-Channel 80V 40A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - SUD40N08-16-E3CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUD40N08-16-E3CT-ND
Single FETs, MOSFETs SUD40N08-16-E3CT-ND
N-Channel 80V 40A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

N-Channel 80V 40A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - SUD40N08-16-E3 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SUD40N08-16-E3
Single FETs, MOSFETs SUD40N08-16-E3
MOSFET N-CH 80V 40A TO252

MOSFET N-CH 80V 40A TO252

Supplier's Site Datasheet
Mosfet Transistor, N Channel, 40 A, 80 V, 0.013 Ohm, 10 V, 2 V Rohs Compliant Vishay - 97W3069 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 40 A, 80 V, 0.013 Ohm, 10 V, 2 V Rohs Compliant Vishay
97W3069
Mosfet Transistor, N Channel, 40 A, 80 V, 0.013 Ohm, 10 V, 2 V Rohs Compliant Vishay 97W3069
MOSFET Transistor, N Channel, 40 A, 80 V, 0.013 ohm, 10 V, 2 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 40 A, 80 V, 0.013 ohm, 10 V, 2 V RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SUD40N08-16-E3
MOSFET SUD40N08-16-E3
MOSFET 80V 40A 100W

MOSFET 80V 40A 100W

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUD40N08-16-E3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUD40N08-16-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUD40N08-16-E3
MOSFET N-CH 80V 40A TO252

MOSFET N-CH 80V 40A TO252

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 137807-SUD40N08-16-E3 SUD40N08-16-E3TR-ND SUD40N08-16-E3 97W3069 SUD40N08-16-E3 SUD40N08-16-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD40N08-16-E3 Single FETs, MOSFETs Single FETs, MOSFETs Mosfet Transistor, N Channel, 40 A, 80 V, 0.013 Ohm, 10 V, 2 V Rohs Compliant Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 80 volts 80 volts
PD 3000 to 136000 milliwatts 3000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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