Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD40N08-16-E3 SUD40N08-16-E3

Description
Manufacturer: Vishay Win Source Part Number: 137807-SUD40N08-16-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta), 136W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 1960pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 16 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD40N08-16-E3 - 137807-SUD40N08-16-E3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SUD40N08-16-E3 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - SUD40N08-16-E3TR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - SUD40N08-16-E3DKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - SUD40N08-16-E3CT-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUD40N08-16-E3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet Transistor, N Channel, 40 A, 80 V, 0.013 Ohm, 10 V, 2 V Rohs Compliant Vishay - 97W3069 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 137807-SUD40N08-16-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta), 136W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 1960pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 16 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD40N08-16-E3 - 137807-SUD40N08-16-E3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD40N08-16-E3
137807-SUD40N08-16-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD40N08-16-E3 137807-SUD40N08-16-E3
Manufacturer: Vishay Win Source Part Number: 137807-SUD40N08-16-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta), 136W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 1960pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 16 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 137807-SUD40N08-16-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 1960pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - SUD40N08-16-E3 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SUD40N08-16-E3
Single FETs, MOSFETs SUD40N08-16-E3
MOSFET N-CH 80V 40A TO252

MOSFET N-CH 80V 40A TO252

Supplier's Site Datasheet
Single FETs, MOSFETs - SUD40N08-16-E3TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUD40N08-16-E3TR-ND
Single FETs, MOSFETs SUD40N08-16-E3TR-ND
N-Channel 80V 40A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

N-Channel 80V 40A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - SUD40N08-16-E3DKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUD40N08-16-E3DKR-ND
Single FETs, MOSFETs SUD40N08-16-E3DKR-ND
N-Channel 80V 40A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

N-Channel 80V 40A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - SUD40N08-16-E3CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUD40N08-16-E3CT-ND
Single FETs, MOSFETs SUD40N08-16-E3CT-ND
N-Channel 80V 40A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

N-Channel 80V 40A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUD40N08-16-E3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUD40N08-16-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUD40N08-16-E3
MOSFET N-CH 80V 40A TO252

MOSFET N-CH 80V 40A TO252

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SUD40N08-16-E3
MOSFET SUD40N08-16-E3
MOSFET 80V 40A 100W

MOSFET 80V 40A 100W

Buy Now Datasheet
Mosfet Transistor, N Channel, 40 A, 80 V, 0.013 Ohm, 10 V, 2 V Rohs Compliant Vishay - 97W3069 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 40 A, 80 V, 0.013 Ohm, 10 V, 2 V Rohs Compliant Vishay
97W3069
Mosfet Transistor, N Channel, 40 A, 80 V, 0.013 Ohm, 10 V, 2 V Rohs Compliant Vishay 97W3069
MOSFET Transistor, N Channel, 40 A, 80 V, 0.013 ohm, 10 V, 2 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 40 A, 80 V, 0.013 ohm, 10 V, 2 V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 137807-SUD40N08-16-E3 SUD40N08-16-E3 SUD40N08-16-E3TR-ND SUD40N08-16-E3 SUD40N08-16-E3 97W3069
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD40N08-16-E3 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet Transistor, N Channel, 40 A, 80 V, 0.013 Ohm, 10 V, 2 V Rohs Compliant Vishay
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 80 volts 80 volts
PD 3000 to 136000 milliwatts 3000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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