MOSFET N-CH 80V 40A TO252
Manufacturer: Vishay
Win Source Part Number: 137807-SUD40N08-16-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 1960pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited
N-Channel 80V 40A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA
N-Channel 80V 40A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA
N-Channel 80V 40A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA
MOSFET Transistor, N Channel, 40 A, 80 V, 0.013 ohm, 10 V, 2 V RoHS Compliant: Yes
MOSFET N-CH 80V 40A TO252
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SUD40N08-16-E3 | 137807-SUD40N08-16-E3 | SUD40N08-16-E3TR-ND | 97W3069 | SUD40N08-16-E3 | SUD40N08-16-E3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD40N08-16-E3 | Single FETs, MOSFETs | Mosfet Transistor, N Channel, 40 A, 80 V, 0.013 Ohm, 10 V, 2 V Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 80 volts | 80 volts | ||||
| IDSS | 40000 milliamps |
