Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD40N03-18P-E3 SUD40N03-18P-E3

Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1097357-SUD40N03-18P -E3 Length: 6.73 mm Drain to Source Voltage (Vdss): 30 V Power Dissipation: 62.5 W Height: 2.39 mm Weight: 1.437803 g Number of Channels: 1 Width: 6.22 mm Rise Time: 8.5 ns Fall Time: 6 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C RoHS: Non-Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 7.5 W Turn-On Delay Time: 8 ns Continuous Drain Current (ID): 40 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 17 ns Drain to Source Resistance: 18 mΩ Gate to Source Voltage (Vgs): 20 V
Request a Quote
Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1097357-SUD40N03-18P -E3 Length: 6.73 mm Drain to Source Voltage (Vdss): 30 V Power Dissipation: 62.5 W Height: 2.39 mm Weight: 1.437803 g Number of Channels: 1 Width: 6.22 mm Rise Time: 8.5 ns Fall Time: 6 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C RoHS: Non-Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 7.5 W Turn-On Delay Time: 8 ns Continuous Drain Current (ID): 40 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 17 ns Drain to Source Resistance: 18 mΩ Gate to Source Voltage (Vgs): 20 V
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD40N03-18P-E3 - 1097357-SUD40N03-18P-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD40N03-18P-E3
1097357-SUD40N03-18P-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD40N03-18P-E3 1097357-SUD40N03-18P-E3
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1097357-SUD40N03-18P -E3 Length: 6.73 mm Drain to Source Voltage (Vdss): 30 V Power Dissipation: 62.5 W Height: 2.39 mm Weight: 1.437803 g Number of Channels: 1 Width: 6.22 mm Rise Time: 8.5 ns Fall Time: 6 ns Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C RoHS: Non-Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 7.5 W Turn-On Delay Time: 8 ns Continuous Drain Current (ID): 40 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 17 ns Drain to Source Resistance: 18 mΩ Gate to Source Voltage (Vgs): 20 V

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1097357-SUD40N03-18P-E3
Length: 6.73 mm
Drain to Source Voltage (Vdss): 30 V
Power Dissipation: 62.5 W
Height: 2.39 mm
Weight: 1.437803 g
Number of Channels: 1
Width: 6.22 mm
Rise Time: 8.5 ns
Fall Time: 6 ns
Categories: Transistors - FETs, MOSFETs - RF
Popularity: Low
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 175 °C
RoHS: Non-Compliant
Min Operating Temperature: -55 °C
Element Configuration: Single
Max Power Dissipation: 7.5 W
Turn-On Delay Time: 8 ns
Continuous Drain Current (ID): 40 A
Drain to Source Breakdown Voltage: 30 V
Turn-Off Delay Time: 17 ns
Drain to Source Resistance: 18 mΩ
Gate to Source Voltage (Vgs): 20 V

Buy Now

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1097357-SUD40N03-18P-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD40N03-18P-E3
V(BR)DSS 30 volts
Unlock Full Specs
to access all available technical data

Similar Products

CSD88539ND 60-V Dual N-Channel NexFET Power MOSFET, CSD88539ND - CSD88539ND - Texas Instruments
Specs
Polarity N-Channel
V(BR)DSS 60 volts
IDSS 46000 milliamps
View Details
8 suppliers
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRF1324 - 1149766-AUIRF1324 - Win Source Electronics
Specs
Package Type SOT3
View Details
5 suppliers
Complementary N-Channel and P-Channel MOSFET Array - ALD1115PAL - Advanced Linear Devices, Inc.
Specs
MOSFET Operating Mode Enhancement; Enhancement Mode
V(BR)DSS 12 volts
IDSS -2 to 4.8 milliamps
View Details
3 suppliers