Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD40N02-3M3P-E3 SUD40N02-3M3P-E3

Description
Manufacturer: Vishay Win Source Part Number: 1104093-SUD40N02-3M3 P-E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.3W (Ta), 79W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 24.4A (Ta), 40A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 160nC @ 10V Max Input Capacitance: 6520pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.3 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Vishay Win Source Part Number: 1104093-SUD40N02-3M3 P-E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.3W (Ta), 79W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 24.4A (Ta), 40A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 160nC @ 10V Max Input Capacitance: 6520pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.3 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD40N02-3M3P-E3 - 1104093-SUD40N02-3M3P-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD40N02-3M3P-E3
1104093-SUD40N02-3M3P-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD40N02-3M3P-E3 1104093-SUD40N02-3M3P-E3
Manufacturer: Vishay Win Source Part Number: 1104093-SUD40N02-3M3 P-E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.3W (Ta), 79W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 24.4A (Ta), 40A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 160nC @ 10V Max Input Capacitance: 6520pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.3 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1104093-SUD40N02-3M3P-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.3W (Ta), 79W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 24.4A (Ta), 40A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 160nC @ 10V
Max Input Capacitance: 6520pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.3 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1104093-SUD40N02-3M3P-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD40N02-3M3P-E3
Polarity N-Channel; N-Channel
V(BR)DSS 20 volts
PD 3300 to 79000 milliwatts
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