Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD35N10-26P-T4GE3 SUD35N10-26P-T4GE3

Manufacturer: Vishay
Win Source Part Number: 056998-SUD35N10-26P-T4GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 8.3W (Ta), 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 4.4V @ 250μA
Max Gate Charge: 47nC @ 10V
Max Input Capacitance: 2000pF @ 12V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 26 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance

N-Channel 100V 35A (Tc) 8.3W (Ta), 83W (Tc) Surface Mount TO-252AA

Power Field-Effect Transistor, 35A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3/2 Product overview: SUD35N10-26P-T4GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 35A, 100V, 0.026ohm, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 35A, 100V, 0.026ohm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SUD35N10-26P-T4GE3 can be used for catalog matching and distributor lookup.