Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD35N05-26L-E3 SUD35N05-26L-E3

Description
Manufacturer: Vishay Win Source Part Number: 1104090-SUD35N05-26L -E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 7.5W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 35A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA (Min) Max Gate Charge: 13nC @ 5V Max Input Capacitance: 885pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 20 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management
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Description
Manufacturer: Vishay Win Source Part Number: 1104090-SUD35N05-26L -E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 7.5W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 35A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA (Min) Max Gate Charge: 13nC @ 5V Max Input Capacitance: 885pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 20 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD35N05-26L-E3 - 1104090-SUD35N05-26L-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD35N05-26L-E3
1104090-SUD35N05-26L-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD35N05-26L-E3 1104090-SUD35N05-26L-E3
Manufacturer: Vishay Win Source Part Number: 1104090-SUD35N05-26L -E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 7.5W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 35A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA (Min) Max Gate Charge: 13nC @ 5V Max Input Capacitance: 885pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 20 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial, Power Management

Manufacturer: Vishay
Win Source Part Number: 1104090-SUD35N05-26L-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 7.5W (Ta), 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 13nC @ 5V
Max Input Capacitance: 885pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 20 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Singapore
55V 35A TO252 MOSFET Transistor
278-SUD35N05-26L-E3
55V 35A TO252 MOSFET Transistor 278-SUD35N05-26L-E3
MOSFET N-CH 55V 35A TO252 Product overview: SUD35N05-26L-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 35A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 35A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUD35N05-26L-E3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 55V 35A TO252 Product overview: SUD35N05-26L-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 35A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 35A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUD35N05-26L-E3 can be used for catalog matching and distributor lookup.

Supplier's Site
Fort Worth, TX, USA
MOSFET N-Ch, Vds 55V, Vgs +/- 20V, Rds(on) 26mohm, Id 35A, TO-252, Pd 7.5W
70026131
MOSFET N-Ch, Vds 55V, Vgs +/- 20V, Rds(on) 26mohm, Id 35A, TO-252, Pd 7.5W 70026131
MOSFET N-Ch, Vds 55V, Vgs +/- 20V, Rds(on) 26mohm, Id 35A, TO-252, Pd 7.5W

MOSFET N-Ch, Vds 55V, Vgs +/- 20V, Rds(on) 26mohm, Id 35A, TO-252, Pd 7.5W

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUD35N05-26L-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUD35N05-26L-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUD35N05-26L-E3
MOSFET N-CH 55V 35A TO252

MOSFET N-CH 55V 35A TO252

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Allied Electronics, Inc. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1104090-SUD35N05-26L-E3 278-SUD35N05-26L-E3 70026131 SUD35N05-26L-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD35N05-26L-E3 55V 35A TO252 MOSFET Transistor MOSFET N-Ch, Vds 55V, Vgs +/- 20V, Rds(on) 26mohm, Id 35A, TO-252, Pd 7.5W Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 55 volts 55 volts
PD 7500 to 50000 milliwatts 7500 milliwatts 50000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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