Manufacturer: Vishay
Win Source Part Number: 1104090-SUD35N05-26L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 7.5W (Ta), 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 13nC @ 5V
Max Input Capacitance: 885pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 20 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management
MOSFET N-Ch, Vds 55V, Vgs +/- 20V, Rds(on) 26mohm, Id 35A, TO-252, Pd 7.5W
MOSFET N-CH 55V 35A TO252
| Win Source Electronics | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1104090-SUD35N05-26L-E3 | 70026131 | SUD35N05-26L-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD35N05-26L-E3 | MOSFET N-Ch, Vds 55V, Vgs +/- 20V, Rds(on) 26mohm, Id 35A, TO-252, Pd 7.5W | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 55 volts | 55 volts | |
| PD | 7500 to 50000 milliwatts | 50000 milliwatts | |
| TJ | -55 to 175 C (-67 to 347 F) |
