Manufacturer: Vishay
Win Source Part Number: 1104085-SUD23N06-31-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 21.4A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 670pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 31 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
N-Channel 60V 21.4A (Tc) 5.7W (Ta), 31.25W (Tc) Surface Mount TO-252AA
N-Channel 60V 21.4A (Tc) 5.7W (Ta), 31.25W (Tc) Surface Mount TO-252AA
N-Channel 60V 21.4A (Tc) 5.7W (Ta), 31.25W (Tc) Surface Mount TO-252AA
N-Channel MOSFET, 60V, 9.1A, 31mR Rds On, DPAK Product overview: SUD23N06-31-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 9.1A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 9.1A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUD23N06-31-GE3 can be used for catalog matching and distributor lookup.
MOSFET N-Ch MOSFET 60V 31 mohm @ 10V
N CHANNEL MOSFET, 60V, 9.1A, TO-252; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:9.1A; On Resistance Rds(on):0.045ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:20V RoHS Compliant: Yes
MOSFET, N-CH, 60V, 21.4A, TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:21.4A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.025ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET, N CHANNEL, 60V, 21.4A, TO-252-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:21.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:31.25W RoHS Compliant: Yes
MOSFET N-CH 60V 21.4A TO252
MOSFET N-CH 60V 21.4A TO252
| Win Source Electronics | DigiKey | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1104085-SUD23N06-31-GE3 | SUD23N06-31-GE3DKR-ND | 6365397 | 6365397P | 278-SUD23N06-31-GE3 | SUD23N06-31-GE3 | 16P3889 | 01AC5034 | 29X0559 | SUD23N06-31-GE3 | SUD23N06-31-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD23N06-31-GE3 | Single FETs, MOSFETs | MOSFETs | MOSFETs | N-Channel 60V 9.1A DPAK MOSFET Transistor | MOSFET | N Channel Mosfet, 60V, 9.1A, To-252; Transistor Polarity Vishay | Mosfet, N-Ch, 60V, 21.4A, To-252Aa; Transistor Polarity Vishay | Mosfet, N Channel, 60V, 21.4A, To-252-3, Full Reel; Channel Type Vishay | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| V(BR)DSS | 60 volts | 60 volts | |||||||||
| PD | 5700 to 31250 milliwatts | 31250 milliwatts | 31250 milliwatts | 5700 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||||||
| Package Type | SOT3; TO-252 (DPAK); TO-252, (D-Pak) | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); Dpak (to-252) | TO-252 (DPAK); TO-252 | TO-3 | TO-3 | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount |
