Power Field-Effect Transistor, 16.9A I(D), 100V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2 Product overview: SUD20N10-66L-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 16.9A, 100V, 0.066ohm, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 16.9A, 100V, 0.066ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUD20N10-66L-GE3
N-Channel 100V 16.9A (Tc) 2.1W (Ta), 41.7W (Tc) Surface Mount TO-252
N-Channel 100V 16.9A (Tc) 2.1W (Ta), 41.7W (Tc) Surface Mount TO-252
N-Channel 100V 16.9A (Tc) 2.1W (Ta), 41.7W (Tc) Surface Mount TO-252
Manufacturer: Vishay
Win Source Part Number: 212446-SUD20N10-66L-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.1W (Ta), 41.7W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 16.9A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 860pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 66 mOhm @ 6.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
MOSFET N-CH 100V 16.9A TO252
MOSFET N-CH 100V 16.9A TO252
(PRICE/TC) MOSFET, N-CH, 100V, 16.9A, TO-252 ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET, N-CH, 100V, 16.9A, TO-252 ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Radwell International | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SUD20N10-66L-GE3 | SUD20N10-66L-GE3DKR-ND | 212446-SUD20N10-66L-GE3 | SUD20N10-66L-GE3 | SUD20N10-66L-GE3 | SUD20N10-66L-GE3 | 137788927 | 57AJ0777 |
| Product Name | N-Channel 16.9A 100V 0.066ohm MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD20N10-66L-GE3 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | Mosfet, N-Ch, 100V, 16.9A, To-252 Rohs Compliant Vishay |
| PD | 41700 milliwatts | 2100 to 41700 milliwatts | 2100 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK); TO-252 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | TO-3 |
