MOSFET P-CH 60V 19A TO252
Manufacturer: Vishay
Win Source Part Number: 031608-SUD19P06-60L-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.7W (Ta), 46W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 19A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1710pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 60 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
P-Channel 60V 19A (Tc) 2.7W (Ta), 46W (Tc) Surface Mount TO-252AA
P-Channel 60V 19A (Tc) 2.7W (Ta), 46W (Tc) Surface Mount TO-252AA
P-Channel 60V 19A (Tc) 2.7W (Ta), 46W (Tc) Surface Mount TO-252AA
MOSFET P-CH 60V 19A TO252
MOSFET 60V 19A 46W 60mohm @ 10V
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SUD19P06-60L-E3 | 031608-SUD19P06-60L-E3 | SUD19P06-60L-E3DKR-ND | SUD19P06-60L-E3 | SUD19P06-60L-E3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD19P06-60L-E3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 60 volts | 60 volts | |||
| IDSS | 19000 milliamps |
