Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD19P06-60L-E3 SUD19P06-60L-E3

Description
Manufacturer: Vishay Win Source Part Number: 031608-SUD19P06-60L- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.7W (Ta), 46W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 19A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1710pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 60 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 031608-SUD19P06-60L- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.7W (Ta), 46W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 19A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1710pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 60 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD19P06-60L-E3 - 031608-SUD19P06-60L-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD19P06-60L-E3
031608-SUD19P06-60L-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD19P06-60L-E3 031608-SUD19P06-60L-E3
Manufacturer: Vishay Win Source Part Number: 031608-SUD19P06-60L- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.7W (Ta), 46W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 19A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1710pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 60 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 031608-SUD19P06-60L-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.7W (Ta), 46W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 19A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1710pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 60 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
P-Channel 30V 19A TO-252 MOSFET Transistor
278-SUD19P06-60L-E3
P-Channel 30V 19A TO-252 MOSFET Transistor 278-SUD19P06-60L-E3
P-Channel MOSFET, 30V, 19A, 60mΩ, TO-252 Product overview: SUD19P06-60L-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 30V, 19A, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 19A, TO-252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUD19P06-60L-E3 can be used for catalog matching and distributor lookup.

P-Channel MOSFET, 30V, 19A, 60mΩ, TO-252 Product overview: SUD19P06-60L-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 30V, 19A, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 19A, TO-252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUD19P06-60L-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SUD19P06-60L-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUD19P06-60L-E3DKR-ND
Single FETs, MOSFETs SUD19P06-60L-E3DKR-ND
P-Channel 60V 19A (Tc) 2.7W (Ta), 46W (Tc) Surface Mount TO-252AA

P-Channel 60V 19A (Tc) 2.7W (Ta), 46W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - SUD19P06-60L-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUD19P06-60L-E3CT-ND
Single FETs, MOSFETs SUD19P06-60L-E3CT-ND
P-Channel 60V 19A (Tc) 2.7W (Ta), 46W (Tc) Surface Mount TO-252AA

P-Channel 60V 19A (Tc) 2.7W (Ta), 46W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - SUD19P06-60L-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUD19P06-60L-E3TR-ND
Single FETs, MOSFETs SUD19P06-60L-E3TR-ND
P-Channel 60V 19A (Tc) 2.7W (Ta), 46W (Tc) Surface Mount TO-252AA

P-Channel 60V 19A (Tc) 2.7W (Ta), 46W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 60V 19A 46W 60mohm @ 10V

MOSFET 60V 19A 46W 60mohm @ 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUD19P06-60L-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUD19P06-60L-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUD19P06-60L-E3
MOSFET P-CH 60V 19A TO252

MOSFET P-CH 60V 19A TO252

Supplier's Site
Single FETs, MOSFETs - SUD19P06-60L-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SUD19P06-60L-E3
Single FETs, MOSFETs SUD19P06-60L-E3
MOSFET P-CH 60V 19A TO252

MOSFET P-CH 60V 19A TO252

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 031608-SUD19P06-60L-E3 278-SUD19P06-60L-E3 SUD19P06-60L-E3DKR-ND SUD19P06-60L-E3 SUD19P06-60L-E3 SUD19P06-60L-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD19P06-60L-E3 P-Channel 30V 19A TO-252 MOSFET Transistor Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel P-Channel; P-Channel
V(BR)DSS 60 volts 60 volts
PD 2700 to 46000 milliwatts 2100 milliwatts 2700 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 C (-67 F) -55 to 175 C (-67 to 347 F)
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