MOSFET P-CH 60V 18.3A DPAK Product overview: SUD19P06-60-BE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 18.3A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 18.3A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUD19P06-60-BE3 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1339229-SUD19P06-60-
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 2,000
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 60 V
Power Dissipation (Max): 2.3W (Ta) , 38.5W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab) , SC-63
Supplier Device Package: TO-252AA
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 39 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SUD19
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
P-Channel 60V 18.3A (Tc) 2.3W (Ta), 38.5W (Tc) Surface Mount TO-252AA
P-Channel 60V 18.3A (Tc) 2.3W (Ta), 38.5W (Tc) Surface Mount TO-252AA
P-Channel 60V 18.3A (Tc) 2.3W (Ta), 38.5W (Tc) Surface Mount TO-252AA
MOSFET, P-CH, 60V, 18.3A, TO-252; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:18.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET, P-CH, 60V, 18.3A, TO-252; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:18.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET P-CH 60V 18.3A DPAK
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SUD19P06-60-BE3 | 1339229-SUD19P06-60-BE3 | 742-SUD19P06-60-BE3CT-ND | 80AH8986 | SUD19P06-60-BE3 |
| Product Name | 60V 18.3A DPAK MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, P-Ch, 60V, 18.3A, To-252; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel | ||
| MOSFET Operating Mode | Enhancement | ||||
| Transconductance | 0.0220 kS | ||||
| PD | 38.5 milliwatts | 2300 to 38500 milliwatts |
