Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs SUD19P06-60-BE3

Description
Win Source Part Number: 1339229-SUD19P06-60- BE3 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: TrenchFET® Package: Tape & Reel Standard Package: 2,000 Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 60 V Power Dissipation (Max): 2.3W (Ta) , 38.5W (Tc) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab) , SC-63 Supplier Device Package: TO-252AA Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 39 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SUD19 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
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Description
Win Source Part Number: 1339229-SUD19P06-60- BE3 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: TrenchFET® Package: Tape & Reel Standard Package: 2,000 Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 60 V Power Dissipation (Max): 2.3W (Ta) , 38.5W (Tc) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab) , SC-63 Supplier Device Package: TO-252AA Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 39 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SUD19 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1339229-SUD19P06-60-BE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1339229-SUD19P06-60-BE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1339229-SUD19P06-60-BE3
Win Source Part Number: 1339229-SUD19P06-60- BE3 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: TrenchFET® Package: Tape & Reel Standard Package: 2,000 Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 60 V Power Dissipation (Max): 2.3W (Ta) , 38.5W (Tc) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab) , SC-63 Supplier Device Package: TO-252AA Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 39 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SUD19 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V

Win Source Part Number: 1339229-SUD19P06-60-BE3
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 2,000
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 60 V
Power Dissipation (Max): 2.3W (Ta) , 38.5W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab) , SC-63
Supplier Device Package: TO-252AA
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 39 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SUD19
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V

Buy Now Datasheet
Single FETs, MOSFETs - 742-SUD19P06-60-BE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SUD19P06-60-BE3CT-ND
Single FETs, MOSFETs 742-SUD19P06-60-BE3CT-ND
P-Channel 60V 18.3A (Tc) 2.3W (Ta), 38.5W (Tc) Surface Mount TO-252AA

P-Channel 60V 18.3A (Tc) 2.3W (Ta), 38.5W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - 742-SUD19P06-60-BE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SUD19P06-60-BE3TR-ND
Single FETs, MOSFETs 742-SUD19P06-60-BE3TR-ND
P-Channel 60V 18.3A (Tc) 2.3W (Ta), 38.5W (Tc) Surface Mount TO-252AA

P-Channel 60V 18.3A (Tc) 2.3W (Ta), 38.5W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - 742-SUD19P06-60-BE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SUD19P06-60-BE3DKR-ND
Single FETs, MOSFETs 742-SUD19P06-60-BE3DKR-ND
P-Channel 60V 18.3A (Tc) 2.3W (Ta), 38.5W (Tc) Surface Mount TO-252AA

P-Channel 60V 18.3A (Tc) 2.3W (Ta), 38.5W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Singapore
60V 18.3A DPAK MOSFET Transistor
278-SUD19P06-60-BE3
60V 18.3A DPAK MOSFET Transistor 278-SUD19P06-60-BE3
MOSFET P-CH 60V 18.3A DPAK Product overview: SUD19P06-60-BE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 18.3A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 18.3A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUD19P06-60-BE3 can be used for catalog matching and distributor lookup.

MOSFET P-CH 60V 18.3A DPAK Product overview: SUD19P06-60-BE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 18.3A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 18.3A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUD19P06-60-BE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUD19P06-60-BE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUD19P06-60-BE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUD19P06-60-BE3
MOSFET P-CH 60V 18.3A DPAK

MOSFET P-CH 60V 18.3A DPAK

Supplier's Site
Mosfet, P-Ch, 60V, 18.3A, To-252; Channel Type Vishay - 80AH8986 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 60V, 18.3A, To-252; Channel Type Vishay
80AH8986
Mosfet, P-Ch, 60V, 18.3A, To-252; Channel Type Vishay 80AH8986
MOSFET, P-CH, 60V, 18.3A, TO-252; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:18.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

MOSFET, P-CH, 60V, 18.3A, TO-252; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:18.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, P-Ch, 60V, 18.3A, To-252; Channel Type Vishay - 78AH6731 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 60V, 18.3A, To-252; Channel Type Vishay
78AH6731
Mosfet, P-Ch, 60V, 18.3A, To-252; Channel Type Vishay 78AH6731
MOSFET, P-CH, 60V, 18.3A, TO-252; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:18.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

MOSFET, P-CH, 60V, 18.3A, TO-252; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:18.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1339229-SUD19P06-60-BE3 742-SUD19P06-60-BE3CT-ND 278-SUD19P06-60-BE3 SUD19P06-60-BE3 80AH8986
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Single FETs, MOSFETs 60V 18.3A DPAK MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P-Ch, 60V, 18.3A, To-252; Channel Type Vishay
Polarity P-Channel P-Channel P-Channel
PD 2300 to 38500 milliwatts 38.5 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; TO-252 (DPAK) TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3
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