Win Source Part Number: 1339229-SUD19P06-60-
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 2,000
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 60 V
Power Dissipation (Max): 2.3W (Ta) , 38.5W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab) , SC-63
Supplier Device Package: TO-252AA
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 39 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SUD19
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
P-Channel 60V 18.3A (Tc) 2.3W (Ta), 38.5W (Tc) Surface Mount TO-252AA
P-Channel 60V 18.3A (Tc) 2.3W (Ta), 38.5W (Tc) Surface Mount TO-252AA
P-Channel 60V 18.3A (Tc) 2.3W (Ta), 38.5W (Tc) Surface Mount TO-252AA
MOSFET P-CH 60V 18.3A DPAK
MOSFET, P-CH, 60V, 18.3A, TO-252; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:18.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET, P-CH, 60V, 18.3A, TO-252; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:18.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1339229-SUD19P06-60-BE3 | 742-SUD19P06-60-BE3CT-ND | SUD19P06-60-BE3 | 80AH8986 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, 60V, 18.3A, To-252; Channel Type Vishay |
| Polarity | P-Channel | P-Channel | ||
| PD | 2300 to 38500 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) |
