Vishay Precision Group -100V -8.8A TO-252 MOSFET Transistor SUD09P10-195-GE3

Description
P-CH MOSFET, -100V, -8.8A, 195mR, TO-252, SMT Product overview: SUD09P10-195-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -100V, -8.8A, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -100V, -8.8A, TO-252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUD09P10-195-GE3 can be used for catalog matching and distributor lookup.
  • Single FETs, MOSFETs - SUD09P10-195-GE3DKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - SUD09P10-195-GE3CT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - SUD09P10-195-GE3TR-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD09P10-195-GE3 - 1104083-SUD09P10-195-GE3 - Win Source Electronics
    Win Source Electronics
  • Mosfet, P-Ch, -100V, -8.8A, 150Deg C; Channel Type Vishay - 70AC6526 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, P Channel, -100V, -8.8A, To-252-3, Full Reel; Channel Type Vishay - 86R4258 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet Transistor, P Channel, -8.8 A, -100 V, 0.162 Ohm, -10 V, -1 V Rohs Compliant Vishay - 23T8552 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Single FETs, MOSFETs - SUD09P10-195-GE3 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUD09P10-195-GE3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
P-CH MOSFET, -100V, -8.8A, 195mR, TO-252, SMT Product overview: SUD09P10-195-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -100V, -8.8A, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -100V, -8.8A, TO-252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUD09P10-195-GE3 can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
ERSAELECTRONICS PTE. LTD.
Singapore
-100V -8.8A TO-252 MOSFET Transistor
278-SUD09P10-195-GE3
-100V -8.8A TO-252 MOSFET Transistor 278-SUD09P10-195-GE3
P-CH MOSFET, -100V, -8.8A, 195mR, TO-252, SMT Product overview: SUD09P10-195-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -100V, -8.8A, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -100V, -8.8A, TO-252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUD09P10-195-GE3 can be used for catalog matching and distributor lookup.

P-CH MOSFET, -100V, -8.8A, 195mR, TO-252, SMT Product overview: SUD09P10-195-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -100V, -8.8A, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -100V, -8.8A, TO-252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUD09P10-195-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SUD09P10-195-GE3DKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUD09P10-195-GE3DKR-ND
Single FETs, MOSFETs SUD09P10-195-GE3DKR-ND
P-Channel 100V 8.8A (Tc) 2.5W (Ta), 32.1W (Tc) Surface Mount TO-252AA

P-Channel 100V 8.8A (Tc) 2.5W (Ta), 32.1W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - SUD09P10-195-GE3CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUD09P10-195-GE3CT-ND
Single FETs, MOSFETs SUD09P10-195-GE3CT-ND
P-Channel 100V 8.8A (Tc) 2.5W (Ta), 32.1W (Tc) Surface Mount TO-252AA

P-Channel 100V 8.8A (Tc) 2.5W (Ta), 32.1W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - SUD09P10-195-GE3TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUD09P10-195-GE3TR-ND
Single FETs, MOSFETs SUD09P10-195-GE3TR-ND
P-Channel 100V 8.8A (Tc) 2.5W (Ta), 32.1W (Tc) Surface Mount TO-252AA

P-Channel 100V 8.8A (Tc) 2.5W (Ta), 32.1W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD09P10-195-GE3 - 1104083-SUD09P10-195-GE3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD09P10-195-GE3
1104083-SUD09P10-195-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD09P10-195-GE3 1104083-SUD09P10-195-GE3
Manufacturer: Vishay Win Source Part Number: 1104083-SUD09P10-195 -GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta), 32.1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 8.8A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 34.8nC @ 10V Max Input Capacitance: 1055pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 195 mOhm @ 3.6A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 1104083-SUD09P10-195-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 32.1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 8.8A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 34.8nC @ 10V
Max Input Capacitance: 1055pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 195 mOhm @ 3.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SUD09P10-195-GE3
MOSFET SUD09P10-195-GE3
MOSFET -100V 195mOhms@ 10V -8.8A

MOSFET -100V 195mOhms@ 10V -8.8A

Buy Now Datasheet
Mosfet, P-Ch, -100V, -8.8A, 150Deg C; Channel Type Vishay - 70AC6526 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -100V, -8.8A, 150Deg C; Channel Type Vishay
70AC6526
Mosfet, P-Ch, -100V, -8.8A, 150Deg C; Channel Type Vishay 70AC6526
MOSFET, P-CH, -100V, -8.8A, 150DEG C; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:8.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; MSL:-RoHS Compliant: Yes

MOSFET, P-CH, -100V, -8.8A, 150DEG C; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:8.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; MSL:-RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, P Channel, -100V, -8.8A, To-252-3, Full Reel; Channel Type Vishay - 86R4258 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, -100V, -8.8A, To-252-3, Full Reel; Channel Type Vishay
86R4258
Mosfet, P Channel, -100V, -8.8A, To-252-3, Full Reel; Channel Type Vishay 86R4258
MOSFET, P CHANNEL, -100V, -8.8A, TO-252-3, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:8.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:32.1W RoHS Compliant: Yes

MOSFET, P CHANNEL, -100V, -8.8A, TO-252-3, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:8.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:32.1W RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet Transistor, P Channel, -8.8 A, -100 V, 0.162 Ohm, -10 V, -1 V Rohs Compliant Vishay - 23T8552 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, P Channel, -8.8 A, -100 V, 0.162 Ohm, -10 V, -1 V Rohs Compliant Vishay
23T8552
Mosfet Transistor, P Channel, -8.8 A, -100 V, 0.162 Ohm, -10 V, -1 V Rohs Compliant Vishay 23T8552
MOSFET Transistor, P Channel, -8.8 A, -100 V, 0.162 ohm, -10 V, -1 V RoHS Compliant: Yes

MOSFET Transistor, P Channel, -8.8 A, -100 V, 0.162 ohm, -10 V, -1 V RoHS Compliant: Yes

Supplier's Site
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
SUD09P10-195-GE3
Triode/MOS Tube/Transistor >> MOSFETs SUD09P10-195-GE3
100V 8.8A 195mΩ@10,3.6A 2.5V@250uA P Channel TO-252(DPAK) MOSFETs ROHS

100V 8.8A 195mΩ@10,3.6A 2.5V@250uA P Channel TO-252(DPAK) MOSFETs ROHS

Supplier's Site Datasheet
Single FETs, MOSFETs - SUD09P10-195-GE3 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SUD09P10-195-GE3
Single FETs, MOSFETs SUD09P10-195-GE3
MOSFET P-CH 100V 8.8A TO252

MOSFET P-CH 100V 8.8A TO252

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUD09P10-195-GE3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUD09P10-195-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUD09P10-195-GE3
MOSFET P-CH 100V 8.8A TO252

MOSFET P-CH 100V 8.8A TO252

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company LCSC Electronics Technology (HK) Limited ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 278-SUD09P10-195-GE3 SUD09P10-195-GE3DKR-ND 1104083-SUD09P10-195-GE3 SUD09P10-195-GE3 70AC6526 86R4258 23T8552 SUD09P10-195-GE3 SUD09P10-195-GE3 SUD09P10-195-GE3
Product Name -100V -8.8A TO-252 MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD09P10-195-GE3 MOSFET Mosfet, P-Ch, -100V, -8.8A, 150Deg C; Channel Type Vishay Mosfet, P Channel, -100V, -8.8A, To-252-3, Full Reel; Channel Type Vishay Mosfet Transistor, P Channel, -8.8 A, -100 V, 0.162 Ohm, -10 V, -1 V Rohs Compliant Vishay Triode/MOS Tube/Transistor >> MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel P-Channel; P-Channel P-Channel P-Channel P-Channel P-Channel; P-Channel
PD 32100 milliwatts 2500 to 32100 milliwatts 32100 milliwatts 2500 milliwatts 2500 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); TO-252, (D-Pak) TO-3 TO-3 TO-3 TO-252 (DPAK) TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 100 volts 100 volts 100 volts
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