Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD08P06-155L-E3 SUD08P06-155L-E3

Description
Manufacturer: Vishay Win Source Part Number: 120185-SUD08P06-155L -E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 8.4A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 450pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 155 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 120185-SUD08P06-155L -E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 8.4A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 450pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 155 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD08P06-155L-E3 - 120185-SUD08P06-155L-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD08P06-155L-E3
120185-SUD08P06-155L-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD08P06-155L-E3 120185-SUD08P06-155L-E3
Manufacturer: Vishay Win Source Part Number: 120185-SUD08P06-155L -E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 8.4A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 450pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 155 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 120185-SUD08P06-155L-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 8.4A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 450pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 155 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SUD08P06-155L-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUD08P06-155L-E3TR-ND
Single FETs, MOSFETs SUD08P06-155L-E3TR-ND
P-Channel 60V 8.4A (Tc) 2W (Ta), 25W (Tc) Surface Mount TO-252AA

P-Channel 60V 8.4A (Tc) 2W (Ta), 25W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - SUD08P06-155L-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SUD08P06-155L-E3
Single FETs, MOSFETs SUD08P06-155L-E3
MOSFET P-CH 60V 8.4A TO252

MOSFET P-CH 60V 8.4A TO252

Supplier's Site
MOSFET P-CH 60V 8.4A DPAK - 880-SUD08P06-155L-E3 - Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 60V 8.4A DPAK
880-SUD08P06-155L-E3
MOSFET P-CH 60V 8.4A DPAK 880-SUD08P06-155L-E3
MOSFET P-CH 60V 8.4A DPAK

MOSFET P-CH 60V 8.4A DPAK

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUD08P06-155L-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUD08P06-155L-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUD08P06-155L-E3
MOSFET P-CH 60V 8.4A TO252

MOSFET P-CH 60V 8.4A TO252

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 120185-SUD08P06-155L-E3 SUD08P06-155L-E3TR-ND SUD08P06-155L-E3 880-SUD08P06-155L-E3 SUD08P06-155L-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD08P06-155L-E3 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET P-CH 60V 8.4A DPAK Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel
V(BR)DSS 60 volts 60 volts -60 volts
PD 2000 to 25000 milliwatts 2000 milliwatts 2000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3; TO-252 (DPAK); TO-252, (D-Pak) TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 450 pF @ 25 V
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