MOSFET P-CH 60V 8.2A DPAK
P-Channel 60V 8.2A (Tc) 1.7W (Ta), 20.8W (Tc) Surface Mount TO-252AA
P-Channel 60V 8.2A (Tc) 1.7W (Ta), 20.8W (Tc) Surface Mount TO-252AA
P-Channel 60V 8.2A (Tc) 1.7W (Ta), 20.8W (Tc) Surface Mount TO-252AA
MOSFET, P-CH, 60V, 8.2A, TO-252; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:8.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET P-CH 60V 8.2A DPAK
| ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SUD08P06-155L-BE3 | 742-SUD08P06-155L-BE3DKR-ND | 78AH6727 | SUD08P06-155L-BE3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, P-Ch, 60V, 8.2A, To-252; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 60 volts | |||
| IDSS | 8200 milliamps | 8200 milliamps |
