Vishay Intertechnology, Inc. Single FETs, MOSFETs SUB75P03-07-E3

Description
P-Channel 30V 75A (Tc) 3.75W (Ta), 187W (Tc) Surface Mount TO-263 (D²Pak)
Request a Quote Datasheet
Description
P-Channel 30V 75A (Tc) 3.75W (Ta), 187W (Tc) Surface Mount TO-263 (D²Pak)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SUB75P03-07-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUB75P03-07-E3TR-ND
Single FETs, MOSFETs SUB75P03-07-E3TR-ND
P-Channel 30V 75A (Tc) 3.75W (Ta), 187W (Tc) Surface Mount TO-263 (D²Pak)

P-Channel 30V 75A (Tc) 3.75W (Ta), 187W (Tc) Surface Mount TO-263 (D²Pak)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUB75P03-07-E3 - 1104079-SUB75P03-07-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUB75P03-07-E3
1104079-SUB75P03-07-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUB75P03-07-E3 1104079-SUB75P03-07-E3
Manufacturer: Vishay Win Source Part Number: 1104079-SUB75P03-07- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.75W (Ta), 187W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 240nC @ 10V Max Input Capacitance: 9000pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1104079-SUB75P03-07-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.75W (Ta), 187W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-263 (D2Pak)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 240nC @ 10V
Max Input Capacitance: 9000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
30V 75A MOSFET Transistor
278-SUB75P03-07-E3
30V 75A MOSFET Transistor 278-SUB75P03-07-E3
MOSFET P-CH 30V 75A TO263 Product overview: SUB75P03-07-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 75A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 75A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUB75P03-07-E3 can be used for catalog matching and distributor lookup.

MOSFET P-CH 30V 75A TO263 Product overview: SUB75P03-07-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 75A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 75A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUB75P03-07-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUB75P03-07-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUB75P03-07-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUB75P03-07-E3
MOSFET P-CH 30V 75A TO263

MOSFET P-CH 30V 75A TO263

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SUB75P03-07-E3TR-ND 1104079-SUB75P03-07-E3 278-SUB75P03-07-E3 SUB75P03-07-E3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUB75P03-07-E3 30V 75A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; TO-263 (D2Pak) Tape & Reel (TR) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 30 volts
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