Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUB75N05-06 SUB75N05-06

Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1181731-SUB75N05-06 Length: 10.41 mm Drain to Source Voltage (Vdss): 50 V Power Dissipation: 3.7 W Height: 4.83 mm Weight: 329.988449 mg Number of Channels: 1 Number of Pins: 3 Width: 9.65 mm Rise Time: 20 ns Fall Time: 20 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-263-3 Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited RoHS: Non-Compliant Min Operating Temperature: -55 °C Voltage Rating (DC): 50 V Element Configuration: Single Max Power Dissipation: 3.7 W Turn-On Delay Time: 20 ns Max Operating Temperature: 175 °C Continuous Drain Current (ID): 75 A Drain to Source Breakdown Voltage: 50 V Turn-Off Delay Time: 50 ns Drain to Source Resistance: 6 mΩ Gate to Source Voltage (Vgs): 20 V
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Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1181731-SUB75N05-06 Length: 10.41 mm Drain to Source Voltage (Vdss): 50 V Power Dissipation: 3.7 W Height: 4.83 mm Weight: 329.988449 mg Number of Channels: 1 Number of Pins: 3 Width: 9.65 mm Rise Time: 20 ns Fall Time: 20 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-263-3 Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited RoHS: Non-Compliant Min Operating Temperature: -55 °C Voltage Rating (DC): 50 V Element Configuration: Single Max Power Dissipation: 3.7 W Turn-On Delay Time: 20 ns Max Operating Temperature: 175 °C Continuous Drain Current (ID): 75 A Drain to Source Breakdown Voltage: 50 V Turn-Off Delay Time: 50 ns Drain to Source Resistance: 6 mΩ Gate to Source Voltage (Vgs): 20 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUB75N05-06 - 1181731-SUB75N05-06 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUB75N05-06
1181731-SUB75N05-06
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUB75N05-06 1181731-SUB75N05-06
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1181731-SUB75N05-06 Length: 10.41 mm Drain to Source Voltage (Vdss): 50 V Power Dissipation: 3.7 W Height: 4.83 mm Weight: 329.988449 mg Number of Channels: 1 Number of Pins: 3 Width: 9.65 mm Rise Time: 20 ns Fall Time: 20 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-263-3 Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited RoHS: Non-Compliant Min Operating Temperature: -55 °C Voltage Rating (DC): 50 V Element Configuration: Single Max Power Dissipation: 3.7 W Turn-On Delay Time: 20 ns Max Operating Temperature: 175 °C Continuous Drain Current (ID): 75 A Drain to Source Breakdown Voltage: 50 V Turn-Off Delay Time: 50 ns Drain to Source Resistance: 6 mΩ Gate to Source Voltage (Vgs): 20 V

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1181731-SUB75N05-06
Length: 10.41 mm
Drain to Source Voltage (Vdss): 50 V
Power Dissipation: 3.7 W
Height: 4.83 mm
Weight: 329.988449 mg
Number of Channels: 1
Number of Pins: 3
Width: 9.65 mm
Rise Time: 20 ns
Fall Time: 20 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TO-263-3
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
RoHS: Non-Compliant
Min Operating Temperature: -55 °C
Voltage Rating (DC): 50 V
Element Configuration: Single
Max Power Dissipation: 3.7 W
Turn-On Delay Time: 20 ns
Max Operating Temperature: 175 °C
Continuous Drain Current (ID): 75 A
Drain to Source Breakdown Voltage: 50 V
Turn-Off Delay Time: 50 ns
Drain to Source Resistance: 6 mΩ
Gate to Source Voltage (Vgs): 20 V

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1181731-SUB75N05-06
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUB75N05-06
V(BR)DSS 50 volts
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