Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 995887-SUB70N04-10-E
Length: 10.41 mm
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 40 V
Power Dissipation: 107 W
Height: 4.83 mm
Weight: 1.437803 g
Number of Channels: 1
Number of Pins: 3
Width: 9.65 mm
Rise Time: 12 ns
Fall Time: 30 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TO-263-3
Alternative Parts (Cross-Reference): IPB80N04S304ATMA1; IRF4104SPBF; IPB80N04S404ATMA1; SUM90N04-3M3P-E3; FDB8442-F085; STB170NF04;
Popularity: Low
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 175 °C
RoHS: Compliant
Min Operating Temperature: -55 °C
REACH SVHC: Unknown
Element Configuration: Single
Max Power Dissipation: 107 W
Turn-On Delay Time: 14 ns
Continuous Drain Current (ID): 70 A
Drain to Source Breakdown Voltage: 40 V
Turn-Off Delay Time: 58 ns
Drain to Source Resistance: 10 mΩ
Gate to Source Voltage (Vgs): 20 V
MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:-; Continuous Drain Current Id:-; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:-; Power Dissipation:-; No. of Pins:3Pins RoHS Compliant: Yes
| Win Source Electronics | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 995887-SUB70N04-10-E3 | 06J8409 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUB70N04-10-E3 | Mosfet; Channel Type Vishay |
| V(BR)DSS | 40 volts |
