Vishay Intertechnology, Inc. FET, MOSFET Arrays SQUN700E-T1_GE3

The SQUN700E is an automotive-qualified triple-die MOSFET package containing one 40 V N-channel, one 40 V P-channel, and one 200 V N-channel MOSFET. It is housed in a PowerPAK 5 x 9 mm surface-mount package and meets AEC-Q101 standards. The N-channel devices have a maximum drain-source voltage of 40 V and 200 V, respectively, with on-resistance of 0.0092 Ω and 0.075 Ω at 10 V gate drive. The P-channel device has a maximum drain-source voltage of -40 V and an on-resistance of 0.030 Ω at 10 V gate drive. Continuous drain current ratings are 30 A, -30 A, and 16 A for the respective devices at 25 °C. The device supports single-pulse avalanche energy up to 35 mJ, 31 mJ, and 12.8 mJ, and operates from -55 °C to +175 °C junction temperature.