Win Source Part Number: 1278533-SQS966ENW-T1
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Standard Package: 3,000
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power - Max: 27.8W (Tc)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: PowerPAK® 1212-8W Dual
Supplier Device Package: PowerPAK® 1212-8W Dual
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 25V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 48 pct.
MSL Level: 1 (Unlimited)
Mfr: Vishay Siliconix
Other Names: SQS966ENW-T1_GE3CT,S
Base Product Number: SQS966
Mosfet Array 2 N-Channel (Dual) 60V 6A (Tc) 27.8W (Tc) Surface Mount, Wettable Flank PowerPAK® 1212-8W Dual
Mosfet Array 2 N-Channel (Dual) 60V 6A (Tc) 27.8W (Tc) Surface Mount, Wettable Flank PowerPAK® 1212-8W Dual
Mosfet Array 2 N-Channel (Dual) 60V 6A (Tc) 27.8W (Tc) Surface Mount, Wettable Flank PowerPAK® 1212-8W Dual
Trans MOSFET N-CH 60V 6A 8-Pin PowerPAK 1212-W EP T/R Automotive AEC-Q101 Product overview: SQS966ENW-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 60V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 60V, 6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQS966ENW-T1_GE3
MOSFET, AEC-Q101, DUAL N-CH, 60V, 6A; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes
MOSFET 2N-CH 60V 6A PWRPAK1212
MOSFET 60V Vds 20V Vgs PowerPAK 1212-8W
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1278533-SQS966ENW-T1_GE3 | SQS966ENW-T1_GE3CT-ND | 278-SQS966ENW-T1_GE3 | SQS966ENW-T1_GE3 | 81AC2830 | SQS966ENW-T1_GE3 | SQS966ENW-T1_GE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | FET, MOSFET Arrays | Automotive 60V 6A MOSFET Transistor | FET, MOSFET Arrays | Mosfet, Aec-Q101, Dual N-Ch, 60V, 6A; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | ||||
| Package Type | SOT3 | PowerPAK® 1212-8W Dual | Tape and Reel | PowerPAK® 1212-8W Dual | TO-3 | Automotive | |
| Transistor Grade / Operating Range | Automotive | ||||||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 60 volts | 60 volts |
