Mosfet Array 2 N-Channel (Dual) 40V 6A (Tc) 27.8W (Tc) Surface Mount, Wettable Flank PowerPAK® 1212-8W Dual
Mosfet Array 2 N-Channel (Dual) 40V 6A (Tc) 27.8W (Tc) Surface Mount, Wettable Flank PowerPAK® 1212-8W Dual
Mosfet Array 2 N-Channel (Dual) 40V 6A (Tc) 27.8W (Tc) Surface Mount, Wettable Flank PowerPAK® 1212-8W Dual
MOSFET 2N-CH 40V 6A PWRPAK1212
MOSFET 40V Vds 20V Vgs PowerPAK 1212-8W
MOSFET, AEC-Q101, DUAL N-CH, 40V, 6A; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SQS944ENW-T1_GE3 | SQS944ENW-T1_GE3TR-ND | SQS944ENW-T1_GE3 | SQS944ENW-T1_GE3 | 81AC2829 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Aec-Q101, Dual N-Ch, 40V, 6A; Transistor Polarity Vishay |
| Polarity | N-Channel; 2 N-Channel (Dual) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 40 volts | ||||
| IDSS | 6000 milliamps | 6000 milliamps | |||
| TJ | -55 to 175 C (-67 to 347 F) |
