Vishay Intertechnology, Inc. Single FETs, MOSFETs SQS840EN-T1_GE3

Description
N-Channel 40V 12A (Tc) 33W (Tc) Surface Mount PowerPAK® 1212-8
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Description
N-Channel 40V 12A (Tc) 33W (Tc) Surface Mount PowerPAK® 1212-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SQS840EN-T1_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQS840EN-T1_GE3CT-ND
Single FETs, MOSFETs SQS840EN-T1_GE3CT-ND
N-Channel 40V 12A (Tc) 33W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 40V 12A (Tc) 33W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SQS840EN-T1_GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQS840EN-T1_GE3DKR-ND
Single FETs, MOSFETs SQS840EN-T1_GE3DKR-ND
N-Channel 40V 12A (Tc) 33W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 40V 12A (Tc) 33W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SQS840EN-T1_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQS840EN-T1_GE3TR-ND
Single FETs, MOSFETs SQS840EN-T1_GE3TR-ND
N-Channel 40V 12A (Tc) 33W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 40V 12A (Tc) 33W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQS840EN-T1_GE3 - 1101754-SQS840EN-T1_GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQS840EN-T1_GE3
1101754-SQS840EN-T1_GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQS840EN-T1_GE3 1101754-SQS840EN-T1_GE3
Manufacturer: Vishay Win Source Part Number: 1101754-SQS840EN-T1_ GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 33W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 22.5nC @ 10V Max Input Capacitance: 1031pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 20 mOhm @ 7.5A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1101754-SQS840EN-T1_GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 33W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 22.5nC @ 10V
Max Input Capacitance: 1031pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 20 mOhm @ 7.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SQS840EN-T1_GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SQS840EN-T1_GE3
Single FETs, MOSFETs SQS840EN-T1_GE3
MOSFET N-CH 40V 12A PPAK1212-8

MOSFET N-CH 40V 12A PPAK1212-8

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 40V 12A 33W AEC-Q101 Qualified

MOSFET 40V 12A 33W AEC-Q101 Qualified

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQS840EN-T1_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQS840EN-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQS840EN-T1_GE3
MOSFET N-CH 40V 12A PPAK1212-8

MOSFET N-CH 40V 12A PPAK1212-8

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SQS840EN-T1_GE3CT-ND 1101754-SQS840EN-T1_GE3 SQS840EN-T1_GE3 SQS840EN-T1_GE3 SQS840EN-T1_GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQS840EN-T1_GE3 Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type PowerPAK® 1212-8 SOT3; PowerPAK 1212-8 PowerPAK® 1212-8 Surface Mount
Transistor Grade / Operating Range Automotive
V(BR)DSS 40 volts 40 volts
PD 33000 milliwatts 33000 milliwatts
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