Power Field-Effect Transistor, Product overview: SQS484EN-T1_BE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQS484EN-T1_BE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 40V 16A 1212-8
N-Channel 40V 16A (Tc) 62W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 40V 16A (Tc) 62W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 40V 16A (Tc) 62W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET, N-CH, 40V, 16A, POWERPAK 1212; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET N-CH 40V 16A 1212-8
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SQS484EN-T1_BE3 | SQS484EN-T1_BE3 | 742-SQS484EN-T1_BE3CT-ND | 78AH6673 | SQS484EN-T1_BE3 |
| Product Name | MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 40V, 16A, Powerpak 1212; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 40 volts | ||||
| IDSS | 16000 milliamps | 16000 milliamps | |||
| PD | 62000 milliwatts |
