Win Source Part Number: 1277854-SQS482ENW-T1
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 62W (Tc)
Package / Case: PowerPAK® 1212-8W
Supplier Device Package: PowerPAK® 1212-8W
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 54 pct.
MSL Level: 1 (Unlimited)
Mfr: Vishay Siliconix
Other Names: SQS482ENW-T1_GE3TR,S
Base Product Number: SQS482
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Power Field-Effect Transistor, 16A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Product overview: SQS482ENW-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 16A, 30V, 0.01ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 16A, 30V, 0.01ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQS482ENW-T1_GE3
N-Channel 30V 16A (Tc) 62W (Tc) Surface Mount PowerPAK® 1212-8W
N-Channel 30V 16A (Tc) 62W (Tc) Surface Mount PowerPAK® 1212-8W
N-Channel 30V 16A (Tc) 62W (Tc) Surface Mount PowerPAK® 1212-8W
MOSFET, N-CH, 30V, 16A, 175DEG C, 62W; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.007ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes
MOSFET N-CH 30V 16A PPAK1212-8W
MOSFET 30V Vds -/+20V Vgs PowerPAK 1212-8W
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1277854-SQS482ENW-T1_GE3 | 278-SQS482ENW-T1_GE3 | SQS482ENW-T1_GE3CT-ND | 81AC2828 | SQS482ENW-T1_GE3 | SQS482ENW-T1_GE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | N-Channel 16A 30V 0.01ohm MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N-Ch, 30V, 16A, 175Deg C, 62W; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | ||||
| Package Type | SOT3 | PowerPAK® 1212-8W | TO-3 | PowerPAKR 1212-8W | ||
| TJ | -55 C (-67 F) | |||||
| Transistor Grade / Operating Range | Automotive |
