Vishay Precision Group Single FETs, MOSFETs SQS460ENW-T1_GE3

Description
N-Channel 60V 8A (Tc) 39W (Tc) Surface Mount PowerPAK® 1212-8W
Request a Quote Datasheet
Description
N-Channel 60V 8A (Tc) 39W (Tc) Surface Mount PowerPAK® 1212-8W
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SQS460ENW-T1_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQS460ENW-T1_GE3CT-ND
Single FETs, MOSFETs SQS460ENW-T1_GE3CT-ND
N-Channel 60V 8A (Tc) 39W (Tc) Surface Mount PowerPAK® 1212-8W

N-Channel 60V 8A (Tc) 39W (Tc) Surface Mount PowerPAK® 1212-8W

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Single FETs, MOSFETs - SQS460ENW-T1_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQS460ENW-T1_GE3TR-ND
Single FETs, MOSFETs SQS460ENW-T1_GE3TR-ND
N-Channel 60V 8A (Tc) 39W (Tc) Surface Mount PowerPAK® 1212-8W

N-Channel 60V 8A (Tc) 39W (Tc) Surface Mount PowerPAK® 1212-8W

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Single FETs, MOSFETs - SQS460ENW-T1_GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQS460ENW-T1_GE3DKR-ND
Single FETs, MOSFETs SQS460ENW-T1_GE3DKR-ND
N-Channel 60V 8A (Tc) 39W (Tc) Surface Mount PowerPAK® 1212-8W

N-Channel 60V 8A (Tc) 39W (Tc) Surface Mount PowerPAK® 1212-8W

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277783-SQS460ENW-T1_GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277783-SQS460ENW-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277783-SQS460ENW-T1_GE3
Win Source Part Number: 1277783-SQS460ENW-T1 _GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101 Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 39W (Tc) Package / Case: PowerPAK® 1212-8W Supplier Device Package: PowerPAK® 1212-8W Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 73 pct. MSL Level: 1 (Unlimited) Mfr: Vishay Siliconix Other Names: SQS460ENW-T1_GE3DKR, SQS460ENW-T1_GE3CT,S QS460ENW-T1_GE3TR Base Product Number: SQS460 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1277783-SQS460ENW-T1_GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 39W (Tc)
Package / Case: PowerPAK® 1212-8W
Supplier Device Package: PowerPAK® 1212-8W
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 73 pct.
MSL Level: 1 (Unlimited)
Mfr: Vishay Siliconix
Other Names: SQS460ENW-T1_GE3DKR,SQS460ENW-T1_GE3CT,SQS460ENW-T1_GE3TR
Base Product Number: SQS460
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Singapore, Singapore
Automotive 60V 8A MOSFET Transistor
278-SQS460ENW-T1_GE3
Automotive 60V 8A MOSFET Transistor 278-SQS460ENW-T1_GE3
Trans MOSFET N-CH 60V 8A Automotive AEC-Q101 8-Pin PowerPAK 1212-W EP T/R Product overview: SQS460ENW-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 60V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 60V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQS460ENW-T1_GE3 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 60V 8A Automotive AEC-Q101 8-Pin PowerPAK 1212-W EP T/R Product overview: SQS460ENW-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 60V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 60V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQS460ENW-T1_GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, Aec-Q101, 60V, 8A; Transistor Polarity Vishay - 47AC9705 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, Aec-Q101, 60V, 8A; Transistor Polarity Vishay
47AC9705
Mosfet, N-Ch, Aec-Q101, 60V, 8A; Transistor Polarity Vishay 47AC9705
MOSFET, N-CH, AEC-Q101, 60V, 8A; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, AEC-Q101, 60V, 8A; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet
MOSFET 60V Vds -/+20V Vgs AEC-Q101 Qualified

MOSFET 60V Vds -/+20V Vgs AEC-Q101 Qualified

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQS460ENW-T1_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQS460ENW-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQS460ENW-T1_GE3
MOSFET N-CH 60V 8A PPAK1212-8W

MOSFET N-CH 60V 8A PPAK1212-8W

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SQS460ENW-T1_GE3CT-ND 1277783-SQS460ENW-T1_GE3 278-SQS460ENW-T1_GE3 47AC9705 SQS460ENW-T1_GE3 SQS460ENW-T1_GE3
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Automotive 60V 8A MOSFET Transistor Mosfet, N-Ch, Aec-Q101, 60V, 8A; Transistor Polarity Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel
Package Type PowerPAK® 1212-8W SOT3 Tape and Reel TO-3 PowerPAKR 1212-8W
Transistor Grade / Operating Range Automotive
MOSFET Operating Mode Enhancement
V(BR)DSS 60 volts
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