The SQS423EN-T1_GE3 is an automotive P-Channel MOSFET designed for applications requiring a maximum drain-source voltage of -30 V and a continuous drain current of -16 A. It features a low on-state resistance of 0.021 Oc at a gate-source voltage of -10 V and 0.060 Oc at -4.5 V, making it suitable for efficient power management. The device is housed in a PowerPAK 1212-8 package, which is lead-free and halogen-free, and is AEC-Q101 qualified, ensuring compliance with automotive standards. It operates within a temperature range of -55 ¬8C to +175 ¬8C and has a maximum power dissipation of 62.5 W at 25 ¬8C. The SQS423EN-T1_GE3 is tested for gate charge and dynamic characteristics, providing reliable performance in demanding environments.
P-Channel 30V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET P-CH 30V 16A PPAK1212-8 Product overview: SQS423EN-T1_GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 16A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQS423EN-T1_GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 849934-SQS423EN-T1_G
Series: Automotive, AEC-Q101, TrenchFET®
Features: 30 V
Package: Reel - TR
Family Name: SQS423
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 84 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SQS423EN-T1_GE3DKR, SQS423EN-T1_GE3CT, SQS423EN-T1_GE3-ND, SQS423EN-T1_GE3TR
MOSFET P-CH 30V 16A PPAK1212-8
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SQS423EN-T1_GE3TR-ND | 278-SQS423EN-T1_GE3 | 849934-SQS423EN-T1_GE3 | SQS423EN-T1_GE3 |
| Product Name | Single FETs, MOSFETs | 30V 16A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQS423EN-T1_GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | |||
| Package Type | PowerPAK® 1212-8 | Tape & Reel (TR) | SOT3 | PowerPAKR 1212-8 |
| Transistor Grade / Operating Range | Automotive |
