Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SQS401ENW-T1_GE3

Description
Win Source Part Number: 1277821-SQS401ENW-T1 _GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, TrenchFET® Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 62.5W (Tc) Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 20 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 58 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SQS401ENW-T1_GE3DKR, SQS401ENW-T1_GE3TR,S QS401ENW-T1_GE3CT,SQ S401ENW-T1_GE3 Base Product Number: SQS401 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Description
Win Source Part Number: 1277821-SQS401ENW-T1 _GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, TrenchFET® Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 62.5W (Tc) Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 20 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 58 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SQS401ENW-T1_GE3DKR, SQS401ENW-T1_GE3TR,S QS401ENW-T1_GE3CT,SQ S401ENW-T1_GE3 Base Product Number: SQS401 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277821-SQS401ENW-T1_GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277821-SQS401ENW-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277821-SQS401ENW-T1_GE3
Win Source Part Number: 1277821-SQS401ENW-T1 _GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, TrenchFET® Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 62.5W (Tc) Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 20 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 58 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SQS401ENW-T1_GE3DKR, SQS401ENW-T1_GE3TR,S QS401ENW-T1_GE3CT,SQ S401ENW-T1_GE3 Base Product Number: SQS401 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1277821-SQS401ENW-T1_GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, TrenchFET®
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 20 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 58 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQS401ENW-T1_GE3DKR,SQS401ENW-T1_GE3TR,SQS401ENW-T1_GE3CT,SQS401ENW-T1_GE3
Base Product Number: SQS401
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Singapore
40V 16A MOSFET Transistor
278-SQS401ENW-T1_GE3
40V 16A MOSFET Transistor 278-SQS401ENW-T1_GE3
MOSFET P-CH 40V 16A PPAK1212-8 Product overview: SQS401ENW-T1_GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 16A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQS401ENW-T1_GE3 can be used for catalog matching and distributor lookup.

MOSFET P-CH 40V 16A PPAK1212-8 Product overview: SQS401ENW-T1_GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 16A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQS401ENW-T1_GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SQS401ENW-T1_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQS401ENW-T1_GE3TR-ND
Single FETs, MOSFETs SQS401ENW-T1_GE3TR-ND
P-Channel 40V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 40V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified

MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified

Buy Now Datasheet
Single FETs, MOSFETs - SQS401ENW-T1_GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SQS401ENW-T1_GE3
Single FETs, MOSFETs SQS401ENW-T1_GE3
MOSFET P-CH 40V 16A PPAK1212-8

MOSFET P-CH 40V 16A PPAK1212-8

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQS401ENW-T1_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQS401ENW-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQS401ENW-T1_GE3
MOSFET P-CH 40V 16A PPAK1212-8

MOSFET P-CH 40V 16A PPAK1212-8

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1277821-SQS401ENW-T1_GE3 278-SQS401ENW-T1_GE3 SQS401ENW-T1_GE3TR-ND SQS401ENW-T1_GE3 SQS401ENW-T1_GE3 SQS401ENW-T1_GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 40V 16A MOSFET Transistor Single FETs, MOSFETs MOSFET Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel P-Channel P-Channel; P-Channel
Package Type SOT3 Tape & Reel (TR) PowerPAK® 1212-8W PowerPAK® 1212-8W PowerPAKR 1212-8W
MOSFET Operating Mode Enhancement
Transconductance 0.0120 kS
PD 62.5 milliwatts 62500 milliwatts
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