Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SQS401ENW-T1_GE3

Description
Win Source Part Number: 1277821-SQS401ENW-T1 _GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, TrenchFET® Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 62.5W (Tc) Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 20 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 58 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SQS401ENW-T1_GE3DKR, SQS401ENW-T1_GE3TR,S QS401ENW-T1_GE3CT,SQ S401ENW-T1_GE3 Base Product Number: SQS401 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Description
Win Source Part Number: 1277821-SQS401ENW-T1 _GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, TrenchFET® Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 62.5W (Tc) Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 20 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 58 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SQS401ENW-T1_GE3DKR, SQS401ENW-T1_GE3TR,S QS401ENW-T1_GE3CT,SQ S401ENW-T1_GE3 Base Product Number: SQS401 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277821-SQS401ENW-T1_GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277821-SQS401ENW-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277821-SQS401ENW-T1_GE3
Win Source Part Number: 1277821-SQS401ENW-T1 _GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, TrenchFET® Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 62.5W (Tc) Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 20 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 58 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SQS401ENW-T1_GE3DKR, SQS401ENW-T1_GE3TR,S QS401ENW-T1_GE3CT,SQ S401ENW-T1_GE3 Base Product Number: SQS401 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1277821-SQS401ENW-T1_GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, TrenchFET®
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 20 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 58 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQS401ENW-T1_GE3DKR,SQS401ENW-T1_GE3TR,SQS401ENW-T1_GE3CT,SQS401ENW-T1_GE3
Base Product Number: SQS401
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Singapore
40V 16A MOSFET Transistor
278-SQS401ENW-T1_GE3
40V 16A MOSFET Transistor 278-SQS401ENW-T1_GE3
MOSFET P-CH 40V 16A PPAK1212-8 Product overview: SQS401ENW-T1_GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 16A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQS401ENW-T1_GE3 can be used for catalog matching and distributor lookup.

MOSFET P-CH 40V 16A PPAK1212-8 Product overview: SQS401ENW-T1_GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 16A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQS401ENW-T1_GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SQS401ENW-T1_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQS401ENW-T1_GE3TR-ND
Single FETs, MOSFETs SQS401ENW-T1_GE3TR-ND
P-Channel 40V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8

P-Channel 40V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SQS401ENW-T1_GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SQS401ENW-T1_GE3
Single FETs, MOSFETs SQS401ENW-T1_GE3
MOSFET P-CH 40V 16A PPAK1212-8

MOSFET P-CH 40V 16A PPAK1212-8

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQS401ENW-T1_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQS401ENW-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQS401ENW-T1_GE3
MOSFET P-CH 40V 16A PPAK1212-8

MOSFET P-CH 40V 16A PPAK1212-8

Supplier's Site
MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified

MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1277821-SQS401ENW-T1_GE3 278-SQS401ENW-T1_GE3 SQS401ENW-T1_GE3TR-ND SQS401ENW-T1_GE3 SQS401ENW-T1_GE3 SQS401ENW-T1_GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 40V 16A MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel P-Channel P-Channel P-Channel; P-Channel
Package Type SOT3 Tape & Reel (TR) PowerPAK® 1212-8W PowerPAK® 1212-8W PowerPAKR 1212-8W
MOSFET Operating Mode Enhancement
Transconductance 0.0120 kS
PD 62.5 milliwatts 62500 milliwatts
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