MOSFET P-CH 40V 16A PPAK1212-8
Trans MOSFET P-CH 40V 16A Automotive AEC-Q101 8-Pin PowerPAK 1212 EP T/R Product overview: SQS401EN-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 40V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 40V, 16A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQS401EN-T1_GE3 can be used for catalog matching and distributor lookup.
P-Channel 40V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET P-CH 40V 16A PPAK1212-8
MOSFET 40V 16A 62.5W AEC-Q101 Qualified
MOSFET, P-CH, 40V, 16A, 175DEG C, 62.5W; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:16A; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:62.5W RoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SQS401EN-T1_GE3 | 278-SQS401EN-T1_GE3 | SQS401EN-T1_GE3TR-ND | SQS401EN-T1_GE3 | SQS401EN-T1_GE3 | 61AC2036 |
| Product Name | Single FETs, MOSFETs | Automotive 40V 16A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, P-Ch, 40V, 16A, 175Deg C, 62.5W; Channel Type Vishay |
| Polarity | P-Channel; P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 40 volts | 40 volts | ||||
| IDSS | 16000 milliamps | 16000 milliamps | ||||
| PD | 62500 milliwatts | 62500 milliwatts | 62500 milliwatts |
