Vishay Intertechnology, Inc. Single FETs, MOSFETs SQS178ELNW-T1_GE3

A single N-channel MOSFET for automotive applications with a 72 V drain-source voltage rating and a maximum junction temperature of 175 °C, packaged in a PowerPAK 1212-8SLW with a 0.75 mm profile and wettable flank terminals. It has a drain-source on-resistance of 0.0095 Ω at 10 V gate-source voltage and 0.0120 Ω at 4.5 V, with a continuous drain current of 54 A at 25 °C and 31 A at 125 °C. The device meets thermal resistance specifications of 2.3 °C/W junction-to-case and 54 °C/W junction-to-ambient when mounted on a 1" square FR4 PCB. The package is lead-free and halogen-free.