Vishay Intertechnology, Inc. 60V 50A DPAK MOSFET Transistor SQR50N06-07L-GE3

N-CH MOSFET 60V 50A TrenchFET Reverse DPAK SMT Product overview: SQR50N06-07L-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 50A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 50A, DPAK, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SQR50N06-07L-GE3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1095823-SQR50N06-07L-GE3
Packaging: Tape & Reel (TR)
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 60 V
Input Capacitance: 5.57 nF
Number of Pins: 3
Rise Time: 13 ns
Fall Time: 7 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TO-263-3
Popularity: Low
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 175 °C
Mount: Surface Mount
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
REACH SVHC: Unknown
Element Configuration: Single
Max Power Dissipation: 136 W
Turn-On Delay Time: 12 ns
Continuous Drain Current (ID): 50 A
Drain to Source Breakdown Voltage: 60 V
Turn-Off Delay Time: 42 ns
Drain to Source Resistance: 7.6 mΩ
Gate to Source Voltage (Vgs): 20 V
Rds On Max: 7.6 mΩ
Nominal Vgs: 2 V
Threshold Voltage: 2 V