Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SQR40N10-25_GE3

Description
Win Source Part Number: 1121003-SQR40N10-25_ GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel Standard Package: 2,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 136W (Tc) Package / Case: TO-252-4, DPak (3 Leads + Tab) Supplier Device Package: TO-252 (DPAK) Reverse Lead Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) Alternative Parts (Cross-Reference): SQR40N10-25-GE3; SQR40N10-25/GE3; SQR40N10-25GE3; ECCN: EAR99 Fake Threat In the Open Market: 66 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SQR40N10-25_GE3-ND,S QR40N10-25-GE3,SQR40 N10-25_GE3CT,SQR40N1 0-25_GE3DKR,SQR40N10 -25_GE3TR,SQR40N10-2 5-GE3-ND Base Product Number: SQR40 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Description
Win Source Part Number: 1121003-SQR40N10-25_ GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel Standard Package: 2,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 136W (Tc) Package / Case: TO-252-4, DPak (3 Leads + Tab) Supplier Device Package: TO-252 (DPAK) Reverse Lead Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) Alternative Parts (Cross-Reference): SQR40N10-25-GE3; SQR40N10-25/GE3; SQR40N10-25GE3; ECCN: EAR99 Fake Threat In the Open Market: 66 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SQR40N10-25_GE3-ND,S QR40N10-25-GE3,SQR40 N10-25_GE3CT,SQR40N1 0-25_GE3DKR,SQR40N10 -25_GE3TR,SQR40N10-2 5-GE3-ND Base Product Number: SQR40 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1121003-SQR40N10-25_GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1121003-SQR40N10-25_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1121003-SQR40N10-25_GE3
Win Source Part Number: 1121003-SQR40N10-25_ GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel Standard Package: 2,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 136W (Tc) Package / Case: TO-252-4, DPak (3 Leads + Tab) Supplier Device Package: TO-252 (DPAK) Reverse Lead Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) Alternative Parts (Cross-Reference): SQR40N10-25-GE3; SQR40N10-25/GE3; SQR40N10-25GE3; ECCN: EAR99 Fake Threat In the Open Market: 66 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SQR40N10-25_GE3-ND,S QR40N10-25-GE3,SQR40 N10-25_GE3CT,SQR40N1 0-25_GE3DKR,SQR40N10 -25_GE3TR,SQR40N10-2 5-GE3-ND Base Product Number: SQR40 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1121003-SQR40N10-25_GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 2,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Supplier Device Package: TO-252 (DPAK) Reverse Lead
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): SQR40N10-25-GE3; SQR40N10-25/GE3; SQR40N10-25GE3;
ECCN: EAR99
Fake Threat In the Open Market: 66 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQR40N10-25_GE3-ND,SQR40N10-25-GE3,SQR40N10-25_GE3CT,SQR40N10-25_GE3DKR,SQR40N10-25_GE3TR,SQR40N10-25-GE3-ND
Base Product Number: SQR40
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - SQR40N10-25_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQR40N10-25_GE3CT-ND
Single FETs, MOSFETs SQR40N10-25_GE3CT-ND
N-Channel 100V 40A (Tc) 136W (Tc) Surface Mount TO-252 (DPAK) Reverse Lead

N-Channel 100V 40A (Tc) 136W (Tc) Surface Mount TO-252 (DPAK) Reverse Lead

Buy Now Datasheet
Single FETs, MOSFETs - SQR40N10-25_GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQR40N10-25_GE3DKR-ND
Single FETs, MOSFETs SQR40N10-25_GE3DKR-ND
N-Channel 100V 40A (Tc) 136W (Tc) Surface Mount TO-252 (DPAK) Reverse Lead

N-Channel 100V 40A (Tc) 136W (Tc) Surface Mount TO-252 (DPAK) Reverse Lead

Buy Now Datasheet
Single FETs, MOSFETs - SQR40N10-25_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQR40N10-25_GE3TR-ND
Single FETs, MOSFETs SQR40N10-25_GE3TR-ND
N-Channel 100V 40A (Tc) 136W (Tc) Surface Mount TO-252 (DPAK) Reverse Lead

N-Channel 100V 40A (Tc) 136W (Tc) Surface Mount TO-252 (DPAK) Reverse Lead

Buy Now Datasheet
Singapore
Automotive 100V 40A 136W MOSFET Transistor
2088-SQR40N10-25_GE3
Automotive 100V 40A 136W MOSFET Transistor 2088-SQR40N10-25_GE3
MOSFETs 100V 40A 136W AEC-Q101 Qualified Product overview: SQR40N10-25_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 100V, 40A, 136W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 100V, 40A, 136W, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SQR40N10-25_GE3 can be used for catalog matching and distributor lookup.

MOSFETs 100V 40A 136W AEC-Q101 Qualified Product overview: SQR40N10-25_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 100V, 40A, 136W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 100V, 40A, 136W, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SQR40N10-25_GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQR40N10-25_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQR40N10-25_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQR40N10-25_GE3
MOSFET N-CH 100V 40A TO252 REV

MOSFET N-CH 100V 40A TO252 REV

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 100V 40A 136W AEC-Q101 Qualified

MOSFET 100V 40A 136W AEC-Q101 Qualified

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1121003-SQR40N10-25_GE3 SQR40N10-25_GE3CT-ND 2088-SQR40N10-25_GE3 SQR40N10-25_GE3 SQR40N10-25_GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Automotive 100V 40A 136W MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel
PD 136000 milliwatts 136 milliwatts
TJ -55 to 175 C (-67 to 347 F)
Package Type SOT3; TO-252 (DPAK) TO-252 (DPAK); TO-252-4, DPAK (3 Leads + Tab) Reel TO-252 (DPAK); TO-252-4, DPak (3 Leads + Tab)
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