Win Source Part Number: 1277809-SQP90142E_GE
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Standard Package: 1
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 78.5A (Tc)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 55 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQP90142E_GE3DKR,SQP
Base Product Number: SQP90142
Product Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 200V 78.5A TO220AB
N-Channel 200V 78.5A (Tc) 250W (Tc) Through Hole TO-220AB
MOSFET N-CH 200V 78.5A TO220AB
MOSFET 200v Vds 78.5A Id AEC-Q101 Qualified
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1277809-SQP90142E_GE3 | SQP90142E_GE3 | SQP90142E_GE3-ND | SQP90142E_GE3 | SQP90142E_GE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||
| Package Type | TO-220; SOT3 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; TO-220-3 | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 200 volts | ||||
| IDSS | 78500 milliamps |
