Win Source Part Number: 1024983-SQP120N10-09
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tube
Standard Package: 500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8645 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): SQP120N10-09_GE3SQP1
ECCN: EAR99
Fake Threat In the Open Market: 82 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQP120N10-09_GE3TRIN
Base Product Number: SQP120
Product Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 100V 120A TO220AB Product overview: SQP120N10-09_GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQP120N10-09_GE3
N-Channel 100V 120A (Tc) 375W (Tc) Through Hole TO-220AB
MOSFET N-CH 100V 120A TO220AB
MOSFET N-Chnl 100-V (D-S) AEC-Q101 Qualified
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1024983-SQP120N10-09_GE3 | 278-SQP120N10-09_GE3 | SQP120N10-09_GE3-ND | SQP120N10-09_GE3 | SQP120N10-09_GE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 100V 120A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | ||
| PD | 375000 milliwatts | 375 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | TO-220; SOT3 | Tube | TO-220; TO-220-3 | 8645 pF @ 25 V |