Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SQP120N06-06_GE3

Win Source Part Number: 1277806-SQP120N06-06_GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, TrenchFET®
Standard Package: 500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 175W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6495 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 66 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQP120N06-06_GE3CT,SQP120N06-06_GE3DKR,SQP120N06-06_GE3TR,SQP120N06-06_GE3TRINACTIVE,SQP120N06-06_GE3CT,SQP120N06-06_GE3DKR,SQP120N06-06_GE3TR,SQP120N06-06_GE3DKRINACTIVE
Base Product Number: SQP120
Product Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V

N-Channel 60V 119A (Tc) 175W (Tc) Through Hole TO-220AB