N-Channel MOSFET, 200V, 95A, 0.0153ohm, TO-263AB Product overview: SQM90142E_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 95A, 0.0153ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 95A, 0.0153ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQM90142E_GE3 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1095817-SQM90142E_GE
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 800
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): SQM90142E_GE3SQM9014
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQM90142E_GE3CT,SQM9
Base Product Number: SQM90142
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 200V 95A TO263
N-Channel 200V 95A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
N-Channel 200V 95A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
N-Channel 200V 95A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
MOSFET 200V Vds 95A Id AEC-Q101 Qualified
MOSFET, AEC-Q101, N-CH, 200V, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:95A; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:375W; No. of Pins:3Pins RoHS Compliant: Yes
MOSFET N-CH 200V 95A TO263
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SQM90142E_GE3 | 1095817-SQM90142E_GE3 | SQM90142E_GE3 | SQM90142E_GE3DKR-ND | SQM90142E_GE3 | 15AC8699 | SQM90142E_GE3 |
| Product Name | N-Channel 200V 95A 0.0153ohm MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, Aec-Q101, N-Ch, 200V, To-263; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| PD | 375000 milliwatts | 375000 milliwatts | 375000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | TO-263; SOT3 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3; TO-263 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
