Vishay Intertechnology, Inc. Single FETs, MOSFETs SQM85N15-19_GE3

MOSFET N-CH 150V 85A TO263

N-Channel 150V 85A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)

N-Channel 150V 85A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)

N-Channel 150V 85A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)

150V 85A N-Channel MOSFET, 19mR Rds(on), TO-263 Product overview: SQM85N15-19_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 150V, 85A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 85A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQM85N15-19_GE3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay Siliconix
Win Source Part Number: 795335-SQM85N15-19_GE3
Series: TrenchFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-263 (D2Pak)
Channel Type Type: N
Drain Source Voltage: 150V
Vgs(th) (Maximum) @ Id: 3.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 120nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 6285pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 375W (Tc)
Rds On (Maximum) @ Id, Vgs: 19 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): IRFS4321PBF; FDB2532-F085; SQM85N15-19_GE3; SUM85N15-19;
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited