MOSFET N-CH 100V 47A TO263 Product overview: SQM47N10-24L_GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 47A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 47A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQM47N10-24L_GE3
N-Channel 100V 47A (Tc) 136W (Tc) Surface Mount TO-263 (D²Pak)
N-Channel 100V 47A (Tc) 136W (Tc) Surface Mount TO-263 (D²Pak)
N-Channel 100V 47A (Tc) 136W (Tc) Surface Mount TO-263 (D²Pak)
Manufacturer: Vishay
Win Source Part Number: 1101748-SQM47N10-24L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 136W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-263 (D2Pak)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 47A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 72nC @ 10V
Max Input Capacitance: 3620pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 24 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
MOSFET N-CH 100V 47A TO263
MOSFET 100V 47A 136W AEC-Q101 Qualified
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SQM47N10-24L_GE3 | 742-SQM47N10-24L_GE3TR-ND | 1101748-SQM47N10-24L_GE3 | SQM47N10-24L_GE3 | SQM47N10-24L_GE3 |
| Product Name | 100V 47A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQM47N10-24L_GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||
| MOSFET Operating Mode | Enhancement | ||||
| Transconductance | 0.0850 kS | ||||
| PD | 136 milliwatts | 136000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |