P-Channel 40V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
P-Channel 40V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
P-Channel 40V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
Power Field-Effect Transistor, 120A I(D), 40V, 0.003ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3/2 PIN Product overview: SQM40031EL_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 120A, 40V, 0.003ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 120A, 40V, 0.003ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQM40031EL_GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay Siliconix
Win Source Part Number: 1324671-SQM40031EL_G
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 800
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Supplier Device Package: TO-263 (D2Pak)
Gate Charge (Qg) (Max) @ Vgs: 800 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 39000 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
ECCN: EAR99
Fake Threat In the Open Market: 66
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Other Part Number: SQM40031EL_GE3CT,SQM
Base Product Number: SQM40031
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
RoHS Status: ROHS3 Compliant
MOSFET P-CH 40V 120A D2PAK
MOSFET, P-CH, 40V, 120A, 175DEG C, 375W; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:120A; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:375W RoHS Compliant: Yes
MOSFET P Ch -40V Vds AEC-Q101 Qualified
MOSFET P-CH 40V 120A D2PAK
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SQM40031EL_GE3CT-ND | 278-SQM40031EL_GE3 | 1324671-SQM40031EL_GE3 | SQM40031EL_GE3 | 10AC9140 | SQM40031EL_GE3 | SQM40031EL_GE3 |
| Product Name | Single FETs, MOSFETs | P-Channel 120A 40V 0.003ohm MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Mosfet, P-Ch, 40V, 120A, 175Deg C, 375W; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | ||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3 | 800 nC @ 10 V | ||
| Transistor Grade / Operating Range | Automotive | ||||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| PD | 375000 milliwatts | 375000 milliwatts | 375000 milliwatts |
