Win Source Part Number: 965604-SQM40020E_GE3
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 800
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.33mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): SQM40020E_GE3SQM4002
ECCN: EAR99
Fake Threat In the Open Market: 74 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQM40020E_GE3DKR,SQM
Base Product Number: SQM40020
Drive Voltage (Max Rds On, Min Rds On): 10V
Automotive N-Channel 40 V (D-S) 175C MOS
Automotive N-Channel 40 V (D-S) 175C MOS
Automotive N-Channel 40 V (D-S) 175C MOS
N-Channel 40V 100A (Tc) 150W (Tc) Surface Mount TO-263 (D²Pak)
N-Channel 40V 100A (Tc) 150W (Tc) Surface Mount TO-263 (D²Pak)
N-Channel 40V 100A (Tc) 150W (Tc) Surface Mount TO-263 (D²Pak)
MOSFET N-CH 40V 100A TO263
MOSFET Automotive N-Channel 40 V (D-S) 175C MOSFET
MOSFET, AEC-Q101, N-CH, 40V, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
| Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 965604-SQM40020E_GE3 | 1884920 | 1884954P | SQM40020E_GE3DKR-ND | SQM40020E_GE3 | SQM40020E_GE3 | 54AH6890 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFETs | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Aec-Q101, N-Ch, 40V, To-263-3; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | |||
| PD | 150000 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | ||||||
| Package Type | TO-263; SOT3 | TO-263; To-263 | TO-263; TO-263 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3; TO-263 | |
| MOSFET Operating Mode | Enhancement |
