P-Channel 60V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
P-Channel 60V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
P-Channel 60V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
Trans MOSFET P-CH 60V 120A 3-Pin(2+Tab) D2PAK Automotive AEC-Q101 Product overview: SQM120P06-07L_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 60V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 60V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQM120P06-07L_GE
Manufacturer: Vishay Siliconix
Win Source Part Number: 795332-SQM120P06-07L
Series: TrenchFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Family Name: SQM120P06-07L
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: TO-263 (D2Pak)
Channel Type Type: P
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 270nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 14280pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 375W (Tc)
Rds On (Maximum) @ Id, Vgs: 6.7 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): BBS3002-TL-1E; BBS3002-DL-1E; NP100P06PDG-E1-AY; NP100P06PDG-E2-AY;
ECCN: EAR99
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
AEQC101 Qualified P-CHANNEL 60-V (D-S) 1
AEQC101 Qualified P-CHANNEL 60-V (D-S) 1
AEQC101 Qualified P-CHANNEL 60-V (D-S) 1
MOSFET P-CH 60V 120A TO263
MOSFET P-CH 60V 120A TO263
MOSFET, AEC-Q101, P-CH, -60V, -120A; Channel Type:P Channel; Drain Source Voltage Vds:-60V; Continuous Drain Current Id:-120A; Rds(on) Test Voltage:-10V; Gate Source Threshold Voltage Max:-2V; Power Dissipation:375W RoHS Compliant: Yes
MOSFET 60 V 120A 375 W AEC-Q101 Qualified
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SQM120P06-07L_GE3TR-ND | 278-SQM120P06-07L_GE3 | 795332-SQM120P06-07L_GE3 | 1807921 | SQM120P06-07L_GE3 | SQM120P06-07L_GE3 | 96Y9633 | SQM120P06-07L_GE3 |
| Product Name | Single FETs, MOSFETs | Automotive 60V 120A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQM120P06-07L_GE3 | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Aec-Q101, P-Ch, -60V, -120A; Channel Type Vishay | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | |||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3 | TO-263; TO-263 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3 | ||
| Transistor Grade / Operating Range | Automotive | |||||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 60 volts | 60 volts |
