Vishay Intertechnology, Inc. MOSFET SQM120N10-3m8_GE3

Description
MOSFET N-Channel 100V AEC-Q101 Qualified
Description
MOSFET N-Channel 100V AEC-Q101 Qualified
Datasheet
Datasheet Summary
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The SQM120N10-3m8-GE3 is an automotive-grade N-channel MOSFET in a TO-263 package, rated for 100 V drain-source voltage and 120 A continuous drain current. It features a maximum on-state resistance of 0.0038 Ω at 10 V gate-source voltage, and is AEC-Q101 qualified. The device supports operation from -55 °C to +175 °C, with a thermal resistance of 0.4 °C/W junction-to-case. The package is lead-free and halogen-free.

Datasheet Summary
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The SQM120N10-3m8-GE3 is an automotive-grade N-channel MOSFET in a TO-263 package, rated for 100 V drain-source voltage and 120 A continuous drain current. It features a maximum on-state resistance of 0.0038 Ω at 10 V gate-source voltage, and is AEC-Q101 qualified. The device supports operation from -55 °C to +175 °C, with a thermal resistance of 0.4 °C/W junction-to-case. The package is lead-free and halogen-free.

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MOSFET N-Channel 100V AEC-Q101 Qualified

MOSFET N-Channel 100V AEC-Q101 Qualified

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number SQM120N10-3m8_GE3
Product Name MOSFET
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