Vishay Intertechnology, Inc. Single FETs, MOSFETs SQM120N10-3M8_GE3

Description
N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
Request a Quote Datasheet
Description
N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SQM120N10-3M8_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQM120N10-3M8_GE3TR-ND
Single FETs, MOSFETs SQM120N10-3M8_GE3TR-ND
N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)

N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)

Buy Now Datasheet
Single FETs, MOSFETs - SQM120N10-3M8_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQM120N10-3M8_GE3CT-ND
Single FETs, MOSFETs SQM120N10-3M8_GE3CT-ND
N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)

N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)

Buy Now Datasheet
Single FETs, MOSFETs - SQM120N10-3M8_GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQM120N10-3M8_GE3DKR-ND
Single FETs, MOSFETs SQM120N10-3M8_GE3DKR-ND
N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)

N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQM120N10-3M8_GE3 - 897259-SQM120N10-3M8_GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQM120N10-3M8_GE3
897259-SQM120N10-3M8_GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQM120N10-3M8_GE3 897259-SQM120N10-3M8_GE3
Manufacturer: Vishay Win Source Part Number: 897259-SQM120N10-3M8 _GE3 Series: Automotive, AEC-Q101, TrenchFET® Operating Temperature Range: -55°C ~ 175°C (TJ) Features: N-Channel 100 V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Package: Reel - TR Mounting: Surface Mount Family Name: SQM120 Categories: Discrete Semiconductor Products Case / Package: TO-263 (D2Pak) ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance Quantity per package: 800 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 51 Weeks HTSUS: 8541.29.0095 Other Part Number: SQM120N10-3M8_GE3DKR , SQM120N10-3M8_GE3-ND , SQM120N10-3M8_GE3CT, SQM120N10-3M8_GE3TR

Manufacturer: Vishay
Win Source Part Number: 897259-SQM120N10-3M8_GE3
Series: Automotive, AEC-Q101, TrenchFET®
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 100 V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: Reel - TR
Mounting: Surface Mount
Family Name: SQM120
Categories: Discrete Semiconductor Products
Case / Package: TO-263 (D2Pak)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
Quantity per package: 800
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SQM120N10-3M8_GE3DKR, SQM120N10-3M8_GE3-ND, SQM120N10-3M8_GE3CT, SQM120N10-3M8_GE3TR

Buy Now Datasheet
Single FETs, MOSFETs - SQM120N10-3M8_GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SQM120N10-3M8_GE3
Single FETs, MOSFETs SQM120N10-3M8_GE3
MOSFET N-CH 100V 120A TO263

MOSFET N-CH 100V 120A TO263

Supplier's Site Datasheet
Singapore
N-Channel 120A 100V 0.0038ohm MOSFET Transistor
278-SQM120N10-3M8_GE3
N-Channel 120A 100V 0.0038ohm MOSFET Transistor 278-SQM120N10-3M8_GE3
Power Field-Effect Transistor, 120A I(D), 100V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2 Product overview: SQM120N10-3M8_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 120A, 100V, 0.0038ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 120A, 100V, 0.0038ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQM120N10-3M8_GE 3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 120A I(D), 100V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2 Product overview: SQM120N10-3M8_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 120A, 100V, 0.0038ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 120A, 100V, 0.0038ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQM120N10-3M8_GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, 100V, 120A, 175Deg C, 375W Rohs Compliant Vishay - 75AH9229 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 120A, 175Deg C, 375W Rohs Compliant Vishay
75AH9229
Mosfet, N-Ch, 100V, 120A, 175Deg C, 375W Rohs Compliant Vishay 75AH9229
MOSFET, N-CH, 100V, 120A, 175DEG C, 375W ROHS COMPLIANT: YES

MOSFET, N-CH, 100V, 120A, 175DEG C, 375W ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQM120N10-3M8_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQM120N10-3M8_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQM120N10-3M8_GE3
MOSFET N-CH 100V 120A TO263

MOSFET N-CH 100V 120A TO263

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SQM120N10-3M8_GE3TR-ND 897259-SQM120N10-3M8_GE3 SQM120N10-3M8_GE3 278-SQM120N10-3M8_GE3 75AH9229 SQM120N10-3M8_GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQM120N10-3M8_GE3 Single FETs, MOSFETs N-Channel 120A 100V 0.0038ohm MOSFET Transistor Mosfet, N-Ch, 100V, 120A, 175Deg C, 375W Rohs Compliant Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; TO-263 (D2Pak) TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Transistor Grade / Operating Range Automotive
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Transistor Technology / Material MOSFET (Metal Oxide)
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