AEQC101 N-CHANNEL 60-V (D-S) 175C MOSFET
AEQC101 N-CHANNEL 60-V (D-S) 175C MOSFET
AEQC101 N-CHANNEL 60-V (D-S) 175C MOSFET
N-Channel 60V 120A (Tc) 375W (Tc) Surface Mount TO-263
N-Channel 60V 120A (Tc) 375W (Tc) Surface Mount TO-263
N-Channel 60V 120A (Tc) 375W (Tc) Surface Mount TO-263
60V 120A N-Channel MOSFET, 3.5mR Rds On, TO-263 Product overview: SQM120N06-3M5L_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 120A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SQM120N06-3M5L_
Manufacturer: Vishay Siliconix
Win Source Part Number: 804283-SQM120N06-3M5
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60V
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 375W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 800
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 3.5mOhm at 29A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 330nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 14700pF at 25V
Current - Continuous Drain (Id) at 25°C: 120A (Tc)
Vgs(th) (Maximum) at Id: 2.5V at 250μA
Maximum Vgs: ±20V
MOSFET N-CH 60V 120A TO263
MOSFET, N-CH, 60V, 120A, 175DEG C, 375W ROHS COMPLIANT: YES
MOSFET N-CH 60V 120A TO263
| RS Components, Ltd. | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 2567447 | SQM120N06-3M5L_GE3TR-ND | 2088-SQM120N06-3M5L_GE3 | 804283-SQM120N06-3M5L_GE3 | SQM120N06-3M5L_GE3 | 75AH9228 | SQM120N06-3M5L_GE3 |
| Product Name | MOSFETs | Single FETs, MOSFETs | N-Channel 60V 120A MOSFET Transistor | FETs - Single - SQM120N06-3M5L_GE3 | Single FETs, MOSFETs | Mosfet, N-Ch, 60V, 120A, 175Deg C, 375W Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| Package Type | TO-263; TO-263 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | |
| Transistor Grade / Operating Range | Automotive | ||||||
| PD | 375000 milliwatts | 375000 milliwatts | 375000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
