Vishay Intertechnology, Inc. Single FETs, MOSFETs SQM120N04-1M7_GE3

N-Channel 40V 120A (Tc) 300W (Tc) Surface Mount TO-263 (D²Pak)

MOSFET N-CH 40V 120A TO263 Product overview: SQM120N04-1M7_GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQM120N04-1M7_GE3 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1277820-SQM120N04-1M7_GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, TrenchFET®
Standard Package: 800
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17350 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
Mfr: Vishay Siliconix
Other Names: SQM120N04-1M7-GE3
Base Product Number: SQM120
Drive Voltage (Max Rds On, Min Rds On): 10V