Vishay Intertechnology, Inc. MOSFET SQM120N03-1m5L_GE3

Description
MOSFET 30V 120A 375W AEC-Q101 Qualified
Description
MOSFET 30V 120A 375W AEC-Q101 Qualified
Datasheet
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SQM120N03-1m5L_GE3 is an automotive-grade N-channel MOSFET in a TO-263 package, rated for 30 V drain-source voltage and 120 A continuous drain current at 125 °C. It features a maximum on-state resistance of 0.0020 Ω at 4.5 V gate-source voltage and 0.0028 Ω at 175 °C junction temperature, with a junction-to-case thermal resistance of 0.4 °C/W. The device is AEC-Q101 qualified, compliant with RoHS Directive 2002/95/EC, and halogen-free per IEC 61249-2-21. Operating junction and storage temperatures range from -55 °C to +175 °C.

Datasheet Summary
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SQM120N03-1m5L_GE3 is an automotive-grade N-channel MOSFET in a TO-263 package, rated for 30 V drain-source voltage and 120 A continuous drain current at 125 °C. It features a maximum on-state resistance of 0.0020 Ω at 4.5 V gate-source voltage and 0.0028 Ω at 175 °C junction temperature, with a junction-to-case thermal resistance of 0.4 °C/W. The device is AEC-Q101 qualified, compliant with RoHS Directive 2002/95/EC, and halogen-free per IEC 61249-2-21. Operating junction and storage temperatures range from -55 °C to +175 °C.

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MOSFET 30V 120A 375W AEC-Q101 Qualified

MOSFET 30V 120A 375W AEC-Q101 Qualified

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number SQM120N03-1m5L_GE3
Product Name MOSFET
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