Vishay Intertechnology, Inc. Single FETs, MOSFETs SQM120N02-1M3L_GE3

Description
N-Channel 20V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
Request a Quote Datasheet
Description
N-Channel 20V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SQM120N02-1M3L_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQM120N02-1M3L_GE3TR-ND
Single FETs, MOSFETs SQM120N02-1M3L_GE3TR-ND
N-Channel 20V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)

N-Channel 20V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)

Buy Now Datasheet
Single FETs, MOSFETs - SQM120N02-1M3L_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQM120N02-1M3L_GE3CT-ND
Single FETs, MOSFETs SQM120N02-1M3L_GE3CT-ND
N-Channel 20V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)

N-Channel 20V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)

Buy Now Datasheet
FETs - Single - SQM120N02-1M3L_GE3 - 808908-SQM120N02-1M3L_GE3 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - SQM120N02-1M3L_GE3
808908-SQM120N02-1M3L_GE3
FETs - Single - SQM120N02-1M3L_GE3 808908-SQM120N02-1M3L_GE3
Manufacturer: Vishay Siliconix Win Source Part Number: 808908-SQM120N02-1M3 L_GE3 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 20V Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 375W (Tc) Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 800 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 1.3mOhm at 40A, 10V Gate Charge (Qg) (Maximum) at Vgs: 290nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 14500pF at 10V Current - Continuous Drain (Id) at 25°C: 120A (Tc) Vgs(th) (Maximum) at Id: 2.5V at 250μA Maximum Vgs: ±20V

Manufacturer: Vishay Siliconix
Win Source Part Number: 808908-SQM120N02-1M3L_GE3
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 375W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 800
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 1.3mOhm at 40A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 290nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 14500pF at 10V
Current - Continuous Drain (Id) at 25°C: 120A (Tc)
Vgs(th) (Maximum) at Id: 2.5V at 250μA
Maximum Vgs: ±20V

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Singapore
20V 120A MOSFET Transistor
278-SQM120N02-1M3L_GE3
20V 120A MOSFET Transistor 278-SQM120N02-1M3L_GE3
MOSFET N-CH 20V 120A TO263 Product overview: SQM120N02-1M3L_GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQM120N02-1M3L_G E3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 20V 120A TO263 Product overview: SQM120N02-1M3L_GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQM120N02-1M3L_GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQM120N02-1M3L_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQM120N02-1M3L_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQM120N02-1M3L_GE3
MOSFET N-CH 20V 120A TO263

MOSFET N-CH 20V 120A TO263

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SQM120N02-1M3L_GE3TR-ND 808908-SQM120N02-1M3L_GE3 278-SQM120N02-1M3L_GE3 SQM120N02-1M3L_GE3
Product Name Single FETs, MOSFETs FETs - Single - SQM120N02-1M3L_GE3 20V 120A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3 Tape & Reel (TR) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Transistor Grade / Operating Range Automotive
PD 375000 milliwatts 375 milliwatts
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