Vishay Intertechnology, Inc. FETs - Single - SQM120N02-1M3L_GE3 SQM120N02-1M3L_GE3

Manufacturer: Vishay Siliconix
Win Source Part Number: 808908-SQM120N02-1M3L_GE3
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 375W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 800
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 1.3mOhm at 40A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 290nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 14500pF at 10V
Current - Continuous Drain (Id) at 25°C: 120A (Tc)
Vgs(th) (Maximum) at Id: 2.5V at 250μA
Maximum Vgs: ±20V

N-Channel 20V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)

N-Channel 20V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)

MOSFET N-CH 20V 120A TO263 Product overview: SQM120N02-1M3L_GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQM120N02-1M3L_GE3 can be used for catalog matching and distributor lookup.