Trans MOSFET N-CH 250V 65A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK Product overview: SQM10250E_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 250V, 65A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 250V, 65A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQM10250E_GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 250V 65A TO263
N-Channel 250V 65A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
N-Channel 250V 65A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
N-Channel 250V 65A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
Win Source Part Number: 967553-SQM10250E_GE3
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 800
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): SQM10250E_GE3SQM1025
ECCN: EAR99
Fake Threat In the Open Market: 48 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQM10250E_GE3TR,SQM1
Base Product Number: SQM10250
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
MOSFET 250V Vds 20V Vgs TO-263
MOSFET N-CH 250V 65A TO263
MOSFET, N-CH, 250V, 65A, 175DEG C, 375W; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.0244ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SQM10250E_GE3 | SQM10250E_GE3 | SQM10250E_GE3TR-ND | 967553-SQM10250E_GE3 | SQM10250E_GE3 | SQM10250E_GE3 | 81AC2823 |
| Product Name | Automotive 250V 65A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 250V, 65A, 175Deg C, 375W; Transistor Polarity Vishay |
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 250 volts | 250 volts | |||||
| PD | 375000 milliwatts | 375000 milliwatts | 375000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel |
