Vishay Intertechnology, Inc. FET, MOSFET Arrays SQJQ906E-T1_GE3

Mosfet Array 2 N-Channel (Dual) 40V 95A (Tc) 50W Surface Mount PowerPAK® 8 x 8 Dual

Mosfet Array 2 N-Channel (Dual) 40V 95A (Tc) 50W Surface Mount PowerPAK® 8 x 8 Dual

Mosfet Array 2 N-Channel (Dual) 40V 95A (Tc) 50W Surface Mount PowerPAK® 8 x 8 Dual

MOSFET 2N-CH 40V 95A PPAK8X8 Product overview: SQJQ906E-T1_GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 95A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 95A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SQJQ906E-T1_GE3 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1278531-SQJQ906E-T1_GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Series: Automotive, AEC-Q101, TrenchFET®
Standard Package: 2,000
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power - Max: 50W
Package / Case: PowerPAK® 8 x 8 Dual
Supplier Device Package: PowerPAK® 8 x 8 Dual
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 45 pct.
MSL Level: 1 (Unlimited)
Mfr: Vishay Siliconix
Other Names: SQJQ906E-T1_GE3DKR,SQJQ906E-T1_GE3,SQJQ906E-T1_GE3TR,SQJQ906E-T1_GE3CT
Base Product Number: SQJQ906